- Manufacture :
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- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
787
In-stock
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IXYS | MOSFET N-CH 600V 50A TO247 | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 660W (Tc) | N-Channel | - | 600V | 50A (Tc) | 73 mOhm @ 25A, 10V | 4.5V @ 4mA | 116nC @ 10V | 4660pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,766
In-stock
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IXYS | MOSFET N-CH 600V 50A TO3P | HiPerFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P | 660W (Tc) | N-Channel | - | 600V | 50A (Tc) | 73 mOhm @ 25A, 10V | 4.5V @ 4mA | 116nC @ 10V | 4660pF @ 25V | 10V | ±30V | |||
|
VIEW |
1,068
In-stock
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Infineon Technologies | MOSFET N-CH 650V 39A TO-247 | CoolMOS™ | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 313W (Tc) | N-Channel | - | 650V | 39A (Tc) | 75 mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116nC @ 10V | 4000pF @ 100V | 10V | ±20V | |||
