Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IXFH50N60X
RFQ
VIEW
RFQ
787
In-stock
IXYS MOSFET N-CH 600V 50A TO247 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 660W (Tc) N-Channel - 600V 50A (Tc) 73 mOhm @ 25A, 10V 4.5V @ 4mA 116nC @ 10V 4660pF @ 25V 10V ±30V
IXFQ50N60X
RFQ
VIEW
RFQ
2,766
In-stock
IXYS MOSFET N-CH 600V 50A TO3P HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P 660W (Tc) N-Channel - 600V 50A (Tc) 73 mOhm @ 25A, 10V 4.5V @ 4mA 116nC @ 10V 4660pF @ 25V 10V ±30V
IXFT50N60X
RFQ
VIEW
RFQ
1,802
In-stock
IXYS MOSFET N-CH 600V 50A TO268 HiPerFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268 660W (Tc) N-Channel - 600V 50A (Tc) 73 mOhm @ 25A, 10V 4.5V @ 4mA 116nC @ 10V 4660pF @ 25V 10V ±30V
SIHH24N65E-T1-GE3
RFQ
VIEW
RFQ
1,108
In-stock
Vishay Siliconix MOSFET N-CHAN 650V 23A POWERPAK - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 202W (Tc) N-Channel - 650V 23A (Tc) 150 mOhm @ 12A, 10V 4V @ 250µA 116nC @ 10V 2814pF @ 100V 10V ±30V
SIHH24N65E-T1-GE3
RFQ
VIEW
RFQ
2,227
In-stock
Vishay Siliconix MOSFET N-CHAN 650V 23A POWERPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 202W (Tc) N-Channel - 650V 23A (Tc) 150 mOhm @ 12A, 10V 4V @ 250µA 116nC @ 10V 2814pF @ 100V 10V ±30V
SIHH24N65E-T1-GE3
RFQ
VIEW
RFQ
2,090
In-stock
Vishay Siliconix MOSFET N-CHAN 650V 23A POWERPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 202W (Tc) N-Channel - 650V 23A (Tc) 150 mOhm @ 12A, 10V 4V @ 250µA 116nC @ 10V 2814pF @ 100V 10V ±30V
SIHH26N60E-T1-GE3
RFQ
VIEW
RFQ
1,552
In-stock
Vishay Siliconix MOSFET N-CH 600V 25A POWERPAK8X8 - Active Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 202W (Tc) N-Channel - 600V 25A (Tc) 135 mOhm @ 13A, 10V 4V @ 250µA 116nC @ 10V 2815pF @ 100V 10V ±30V
FDBL0260N100
RFQ
VIEW
RFQ
3,817
In-stock
ON Semiconductor MOSFET N-CH 100V 200A 8PSOF PowerTrench® Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSFN 8-PSOF 3.5W (Ta), 250W (Tc) N-Channel - 100V 200A (Tc) 2.6 mOhm @ 80A, 10V 4V @ 250µA 116nC @ 10V 9265pF @ 50V 10V ±20V
FDBL0260N100
RFQ
VIEW
RFQ
1,647
In-stock
ON Semiconductor MOSFET N-CH 100V 200A 8PSOF PowerTrench® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSFN 8-PSOF 3.5W (Ta), 250W (Tc) N-Channel - 100V 200A (Tc) 2.6 mOhm @ 80A, 10V 4V @ 250µA 116nC @ 10V 9265pF @ 50V 10V ±20V
FDBL0260N100
RFQ
VIEW
RFQ
1,053
In-stock
ON Semiconductor MOSFET N-CH 100V 200A 8PSOF PowerTrench® Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerSFN 8-PSOF 3.5W (Ta), 250W (Tc) N-Channel - 100V 200A (Tc) 2.6 mOhm @ 80A, 10V 4V @ 250µA 116nC @ 10V 9265pF @ 50V 10V ±20V
SIHH26N60E-T1-GE3
RFQ
VIEW
RFQ
3,071
In-stock
Vishay Siliconix MOSFET N-CH 600V 25A POWERPAK8X8 - Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 202W (Tc) N-Channel - 600V 25A (Tc) 135 mOhm @ 13A, 10V 4V @ 250µA 116nC @ 10V 2815pF @ 100V 10V ±30V
SIHH26N60E-T1-GE3
RFQ
VIEW
RFQ
944
In-stock
Vishay Siliconix MOSFET N-CH 600V 25A POWERPAK8X8 - Active Tape & Reel (TR) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PowerPAK® 8 x 8 202W (Tc) N-Channel - 600V 25A (Tc) 135 mOhm @ 13A, 10V 4V @ 250µA 116nC @ 10V 2815pF @ 100V 10V ±30V
IPW60R075CPFKSA1
RFQ
VIEW
RFQ
1,068
In-stock
Infineon Technologies MOSFET N-CH 650V 39A TO-247 CoolMOS™ Not For New Designs Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 313W (Tc) N-Channel - 650V 39A (Tc) 75 mOhm @ 26A, 10V 3.5V @ 1.7mA 116nC @ 10V 4000pF @ 100V 10V ±20V