Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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APT60M80L2VRG
RFQ
VIEW
RFQ
3,725
In-stock
Microsemi Corporation MOSFET N-CH 600V 65A TO-264MAX POWER MOS V® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA 264 MAX™ [L2] 833W (Tc) N-Channel - 600V 65A (Tc) 80 mOhm @ 32.5A, 10V 4V @ 5mA 590nC @ 10V 13300pF @ 25V 10V ±30V
FQA65N20
RFQ
VIEW
RFQ
1,370
In-stock
ON Semiconductor MOSFET N-CH 200V 65A TO-3P QFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PN 310W (Tc) N-Channel - 200V 65A (Tc) 32 mOhm @ 32.5A, 10V 5V @ 250µA 200nC @ 10V 7900pF @ 25V 10V ±30V
NTHL040N65S3F
RFQ
VIEW
RFQ
3,018
In-stock
ON Semiconductor SUPERFET3 650V TO247 SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 446W (Tc) N-Channel - 650V 65A (Tc) 40 mOhm @ 32.5A, 10V 5V @ 6.5mA 158nC @ 10V 5940pF @ 400V 10V ±30V
FDP65N06
RFQ
VIEW
RFQ
785
In-stock
ON Semiconductor MOSFET N-CH 60V 65A TO-220 UniFET™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220-3 135W (Tc) N-Channel - 60V 65A (Tc) 16 mOhm @ 32.5A, 10V 4V @ 250µA 43nC @ 10V 2170pF @ 25V 10V ±20V