- Part Status :
- Technology :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
-
- 10 mOhm @ 15A, 10V (2)
- 15 mOhm @ 30A, 10V (1)
- 16 mOhm @ 32.5A, 10V (2)
- 19.5 mOhm @ 30A, 10V (2)
- 24 mOhm @ 46A, 10V (1)
- 25 mOhm @ 46A, 10V (1)
- 32 mOhm @ 32.5A, 10V (1)
- 4.2 mOhm @ 55A, 10V (1)
- 4.8 mOhm @ 32.5A, 10V (1)
- 40 mOhm @ 32.5A, 10V (2)
- 49 mOhm @ 32.5A, 10V (1)
- 69 mOhm @ 40A, 20V (2)
- 7.3 mOhm @ 32.5A, 10V (1)
- 70 mOhm @ 32.5A, 20V (1)
- 8.4 mOhm @ 25A, 10V (1)
- 80 mOhm @ 32.5A, 10V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
21 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,226
In-stock
|
Microsemi Corporation | POWER MOSFET - SIC | - | Obsolete | Bulk | SiCFET (Silicon Carbide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 300W (Tc) | N-Channel | - | 700V | 65A (Tc) | 70 mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125nC @ 20V | - | 20V | +25V, -10V | |||
|
VIEW |
2,955
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 65W (Tc) | N-Channel | - | 30V | 65A (Tc) | 8.4 mOhm @ 25A, 10V | 2.35V @ 25µA | 13nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,976
In-stock
|
Vishay Siliconix | MOSFET P-CH 40V 65A TO220AB | TrenchFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 3.75W (Ta), 120W (Tc) | P-Channel | - | 40V | 65A (Tc) | 15 mOhm @ 30A, 10V | 3V @ 250µA | 130nC @ 10V | 5400pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,725
In-stock
|
Microsemi Corporation | MOSFET N-CH 600V 65A TO-264MAX | POWER MOS V® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | 264 MAX™ [L2] | 833W (Tc) | N-Channel | - | 600V | 65A (Tc) | 80 mOhm @ 32.5A, 10V | 4V @ 5mA | 590nC @ 10V | 13300pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
2,749
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 75W (Tc) | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,791
In-stock
|
Infineon Technologies | MOSFET N-CH 30V 65A I-PAK | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 75W (Tc) | N-Channel | - | 30V | 65A (Tc) | 10 mOhm @ 15A, 10V | 1V @ 250µA | 14nC @ 4.5V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
979
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 65A TO-220FP | DeepGATE™, STripFET™ VII | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 35W (Tc) | N-Channel | - | 100V | 65A (Tc) | 4.2 mOhm @ 55A, 10V | 4.5V @ 250µA | 117nC @ 10V | 8115pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
606
In-stock
|
STMicroelectronics | MOSFET N-CH 1200V 65A HIP247 | - | Active | - | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 318W (Tc) | N-Channel | - | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | |||
|
VIEW |
1,370
In-stock
|
ON Semiconductor | MOSFET N-CH 200V 65A TO-3P | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3PN | 310W (Tc) | N-Channel | - | 200V | 65A (Tc) | 32 mOhm @ 32.5A, 10V | 5V @ 250µA | 200nC @ 10V | 7900pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,581
In-stock
|
STMicroelectronics | MOSFET N-CH 1.2KV TO247-3 | - | Active | Tube | SiCFET (Silicon Carbide) | -55°C ~ 200°C (TJ) | Through Hole | TO-247-3 | HiP247™ | 318W (Tc) | N-Channel | - | 1200V | 65A (Tc) | 69 mOhm @ 40A, 20V | 3V @ 1mA | 122nC @ 20V | 1900pF @ 400V | 20V | +25V, -10V | |||
|
VIEW |
3,018
In-stock
|
ON Semiconductor | SUPERFET3 650V TO247 | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 446W (Tc) | N-Channel | - | 650V | 65A (Tc) | 40 mOhm @ 32.5A, 10V | 5V @ 6.5mA | 158nC @ 10V | 5940pF @ 400V | 10V | ±30V | |||
|
VIEW |
3,830
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 65A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 24 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
|
|
VIEW |
3,883
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 65A TO-247 | DeepGATE™, STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 150W (Tc) | N-Channel | - | 100V | 65A (Tc) | 19.5 mOhm @ 30A, 10V | 4V @ 250µA | 85nC @ 10V | 5800pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,072
In-stock
|
STMicroelectronics | MOSFET N-CH 100V 65A TO-220 | DeepGATE™, STripFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 150W (Tc) | N-Channel | - | 100V | 65A (Tc) | 19.5 mOhm @ 30A, 10V | 4V @ 250µA | 85nC @ 10V | 5800pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,476
In-stock
|
STMicroelectronics | MOSFET N-CH 600V 65A TO-247 | MDmesh™ II | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247 | 450W (Tc) | N-Channel | - | 600V | 65A (Tc) | 49 mOhm @ 32.5A, 10V | 4V @ 250µA | 174nC @ 10V | 5800pF @ 100V | 10V | ±25V | |||
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|
VIEW |
2,010
In-stock
|
ON Semiconductor | MOSFET N-CH 650V 65A TO247-3 | SuperFET® III | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C | Through Hole | TO-247-3 | TO-247-3 | 417W (Tc) | N-Channel | - | 650V | 65A (Tc) | 40 mOhm @ 32.5A, 10V | 4.5V @ 6.5mA | 136nC @ 10V | 4740pF @ 400V | 10V | ±30V | |||
|
VIEW |
2,417
In-stock
|
STMicroelectronics | MOSFET N CH 30V 65A IPAK | STripFET™ V | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 50W (Tc) | N-Channel | - | 30V | 65A (Tc) | 7.3 mOhm @ 32.5A, 10V | 3V @ 250µA | 8nC @ 4.5V | 1290pF @ 25V | 4.5V, 10V | ±22V | |||
|
VIEW |
785
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 65A TO-220 | UniFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 135W (Tc) | N-Channel | - | 60V | 65A (Tc) | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 43nC @ 10V | 2170pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,523
In-stock
|
Infineon Technologies | MOSFET N-CH 200V 65A TO-247AC | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -40°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 330W (Tc) | N-Channel | - | 200V | 65A (Tc) | 25 mOhm @ 46A, 10V | 5V @ 250µA | 98nC @ 10V | 4600pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,454
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 100V | 65A (Tc) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,646
In-stock
|
ON Semiconductor | MOSFET N-CH 60V 65A TO-220 | QFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 150W (Tc) | N-Channel | - | 60V | 65A (Tc) | 16 mOhm @ 32.5A, 10V | 4V @ 250µA | 65nC @ 10V | 2410pF @ 25V | 10V | ±25V | |||
