Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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C3M0030090K
RFQ
VIEW
RFQ
3,504
In-stock
Cree/Wolfspeed ZFET 900V, 30 MOHM, G3 SIC MOSFE C3M™ Active - SiCFET (Silicon Carbide) -55°C ~ 150°C (TJ) Through Hole TO-247-4 TO-247-4L 149W (Tc) N-Channel - 900V 63A (Tc) 39 mOhm @ 35A, 15V 3.5V @ 11mA 87nC @ 15V 1864pF @ 600V 15V +15V, -4V
IXFL132N50P3
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VIEW
RFQ
3,098
In-stock
IXYS MOSFET N-CH 500V 63A ISOPLUS264 HiPerFET™, Polar3™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole ISOPLUS264™ ISOPLUS264™ 520W (Tc) N-Channel - 500V 63A (Tc) 43 mOhm @ 66A, 10V 5V @ 8mA 250nC @ 10V 18600pF @ 25V 10V ±30V
IPW60R031CFD7XKSA1
RFQ
VIEW
RFQ
849
In-stock
Infineon Technologies MOSFET N-CH 600V TO247-3 CoolMOS™ CFD7 Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 PG-TO247-3 278W (Tc) N-Channel - 650V 63A (Tc) 31 mOhm @ 32.6A, 10V 4.5V @ 1.63mA 141nC @ 10V 5623pF @ 400V 10V ±20V
STW70N65M2
RFQ
VIEW
RFQ
3,975
In-stock
STMicroelectronics MOSFET N-CH 650V 63A TO247-3 MDmesh™ M2 Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247-3 446W (Tc) N-Channel - 650V 63A (Tc) 46 mOhm @ 31.5A, 10V 4V @ 250µA 117nC @ 10V 5140pF @ 100V 10V ±25V