- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,098
In-stock
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IXYS | MOSFET N-CH 500V 63A ISOPLUS264 | HiPerFET™, Polar3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS264™ | 520W (Tc) | N-Channel | - | 500V | 63A (Tc) | 43 mOhm @ 66A, 10V | 5V @ 8mA | 250nC @ 10V | 18600pF @ 25V | 10V | ±30V | |||
|
VIEW |
849
In-stock
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Infineon Technologies | MOSFET N-CH 600V TO247-3 | CoolMOS™ CFD7 | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | 278W (Tc) | N-Channel | - | 650V | 63A (Tc) | 31 mOhm @ 32.6A, 10V | 4.5V @ 1.63mA | 141nC @ 10V | 5623pF @ 400V | 10V | ±20V | |||
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VIEW |
3,975
In-stock
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STMicroelectronics | MOSFET N-CH 650V 63A TO247-3 | MDmesh™ M2 | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | 446W (Tc) | N-Channel | - | 650V | 63A (Tc) | 46 mOhm @ 31.5A, 10V | 4V @ 250µA | 117nC @ 10V | 5140pF @ 100V | 10V | ±25V | |||
