- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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8 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,401
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 5.2A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | - | N-Channel | 200V | 5.2A (Tc) | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
1,204
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
630
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | 200V | 4.1A (Tc) | 800 mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
3,173
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | 200V | 4.1A (Tc) | 800 mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
943
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.1A TO220FP | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | 30W (Tc) | N-Channel | 200V | 4.1A (Tc) | 800 mOhm @ 2.5A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
1,374
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 4.8A I-PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TO-251AA | 2.5W (Ta), 42W (Tc) | N-Channel | 200V | 4.8A (Tc) | 800 mOhm @ 2.9A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
601
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 800MA 4-DIP | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.300", 7.62mm) | 4-DIP, Hexdip, HVMDIP | 1W (Ta) | N-Channel | 200V | 800mA (Ta) | 800 mOhm @ 480mA, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V | |||
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VIEW |
2,649
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 5.2A TO-220AB | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 50W (Tc) | N-Channel | 200V | 5.2A (Tc) | 800 mOhm @ 3.1A, 10V | 4V @ 250µA | 14nC @ 10V | 260pF @ 25V | 10V | ±20V |