- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,799
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 335W (Tc) | N-Channel | - | 1000V | 9A (Tc) | 1.4 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2605pF @ 25V | 10V | ±30V | |||
|
VIEW |
2,530
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 5A TO-220 | POWER MOS 8™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220 [K] | 225W (Tc) | N-Channel | - | 1000V | 5A (Tc) | 2.8 Ohm @ 3A, 10V | 5V @ 500µA | 43nC @ 10V | 1409pF @ 25V | 10V | ±30V | |||
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VIEW |
2,812
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 32A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 380 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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VIEW |
2,188
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 14A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 500W (Tc) | N-Channel | - | 1000V | 14A (Tc) | 900 mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | 3965pF @ 25V | 10V | ±30V | |||
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VIEW |
2,250
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 9A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 337W (Tc) | N-Channel | - | 1000V | 9A (Tc) | 1.6 Ohm @ 5A, 10V | 5V @ 1mA | 80nC @ 10V | 2606pF @ 25V | 10V | ±30V | |||
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VIEW |
3,030
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 35A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1135W (Tc) | N-Channel | - | 1000V | 35A (Tc) | 380 mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | 9835pF @ 25V | 10V | ±30V | |||
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VIEW |
2,720
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 14A TO-247 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247 [B] | 500W (Tc) | N-Channel | - | 1000V | 14A (Tc) | 980 mOhm @ 7A, 10V | 5V @ 1mA | 120nC @ 10V | 3965pF @ 25V | 10V | ±30V | |||
|
VIEW |
3,104
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 32A TO264 | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-264-3, TO-264AA | TO-264 | 1040W (Tc) | N-Channel | - | 1000V | 32A (Tc) | 400 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
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|
VIEW |
2,958
In-stock
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Microsemi Corporation | MOSFET N-CH 1000V 30A T-MAX | POWER MOS 8™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 Variant | T-MAX™ [B2] | 1040W (Tc) | N-Channel | - | 1000V | 30A (Tc) | 440 mOhm @ 16A, 10V | 5V @ 2.5mA | 260nC @ 10V | 8500pF @ 25V | 10V | ±30V | |||
