Packaging :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
APT9M100B
RFQ
VIEW
RFQ
1,799
In-stock
Microsemi Corporation MOSFET N-CH 1000V 9A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 335W (Tc) N-Channel - 1000V 9A (Tc) 1.4 Ohm @ 5A, 10V 5V @ 1mA 80nC @ 10V 2605pF @ 25V 10V ±30V
APT5F100K
RFQ
VIEW
RFQ
2,530
In-stock
Microsemi Corporation MOSFET N-CH 1000V 5A TO-220 POWER MOS 8™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220 [K] 225W (Tc) N-Channel - 1000V 5A (Tc) 2.8 Ohm @ 3A, 10V 5V @ 500µA 43nC @ 10V 1409pF @ 25V 10V ±30V
APT31M100B2
RFQ
VIEW
RFQ
2,812
In-stock
Microsemi Corporation MOSFET N-CH 1000V 32A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel - 1000V 32A (Tc) 380 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 8500pF @ 25V 10V ±30V
APT14M100B
RFQ
VIEW
RFQ
2,188
In-stock
Microsemi Corporation MOSFET N-CH 1000V 14A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 500W (Tc) N-Channel - 1000V 14A (Tc) 900 mOhm @ 7A, 10V 5V @ 1mA 120nC @ 10V 3965pF @ 25V 10V ±30V
APT9F100B
RFQ
VIEW
RFQ
2,250
In-stock
Microsemi Corporation MOSFET N-CH 1000V 9A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 337W (Tc) N-Channel - 1000V 9A (Tc) 1.6 Ohm @ 5A, 10V 5V @ 1mA 80nC @ 10V 2606pF @ 25V 10V ±30V
APT22F100J
RFQ
VIEW
RFQ
2,083
In-stock
Microsemi Corporation MOSFET N-CH 1000V 23A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 545W (Tc) N-Channel - 1000V 23A (Tc) 380 mOhm @ 18A, 10V - 305nC @ 10V 9835pF @ 25V 10V ±30V
APT19F100J
RFQ
VIEW
RFQ
3,337
In-stock
Microsemi Corporation MOSFET N-CH 1000V 20A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 460W (Tc) N-Channel - 1000V 20A (Tc) 440 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 8500pF @ 25V 10V ±30V
APT34F100B2
RFQ
VIEW
RFQ
3,030
In-stock
Microsemi Corporation MOSFET N-CH 1000V 35A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1135W (Tc) N-Channel - 1000V 35A (Tc) 380 mOhm @ 18A, 10V 5V @ 2.5mA 305nC @ 10V 9835pF @ 25V 10V ±30V
APT14M100S
RFQ
VIEW
RFQ
2,796
In-stock
Microsemi Corporation MOSFET N-CH 1000V 14A D3PAK POWER MOS 8™ Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D3Pak 500W (Tc) N-Channel - 1000V 14A (Tc) 880 mOhm @ 7A, 10V 5V @ 1mA 120nC @ 10V 3965pF @ 25V 10V ±30V
APT9F100S
RFQ
VIEW
RFQ
1,165
In-stock
Microsemi Corporation MOSFET N-CH 1000V 9A D3PAK POWER MOS 8™ Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 337W (Tc) N-Channel - 1000V 9A (Tc) 1.6 Ohm @ 5A, 10V 5V @ 1mA 80nC @ 10V 2606pF @ 25V 10V ±30V
APT17F100S
RFQ
VIEW
RFQ
3,977
In-stock
Microsemi Corporation MOSFET N-CH 1000V 17A D3PAK POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 625W (Tc) N-Channel - 1000V 17A (Tc) 780 mOhm @ 9A, 10V 5V @ 1mA 150nC @ 10V 4845pF @ 25V 10V ±30V
APT14F100S
RFQ
VIEW
RFQ
1,939
In-stock
Microsemi Corporation MOSFET N-CH 1000V 14A D3PAK POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-268-3, D³Pak (2 Leads + Tab), TO-268AA D3Pak 500W (Tc) N-Channel - 1000V 14A (Tc) 980 mOhm @ 7A, 10V 5V @ 1mA 120nC @ 10V 3965pF @ 25V 10V ±30V
APT14F100B
RFQ
VIEW
RFQ
2,720
In-stock
Microsemi Corporation MOSFET N-CH 1000V 14A TO-247 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 TO-247 [B] 500W (Tc) N-Channel - 1000V 14A (Tc) 980 mOhm @ 7A, 10V 5V @ 1mA 120nC @ 10V 3965pF @ 25V 10V ±30V
APT25M100J
RFQ
VIEW
RFQ
2,575
In-stock
Microsemi Corporation MOSFET N-CH 1000V 25A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 545W (Tc) N-Channel - 1000V 25A (Tc) 330 mOhm @ 18A, 10V 5V @ 2.5mA 305nC @ 10V 9835pF @ 25V 10V ±30V
APT21M100J
RFQ
VIEW
RFQ
2,178
In-stock
Microsemi Corporation MOSFET N-CH 1000V 21A SOT-227 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Chassis Mount SOT-227-4, miniBLOC ISOTOP® 462W (Tc) N-Channel - 1000V 21A (Tc) 380 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 8500pF @ 25V 10V ±30V
APT31M100L
RFQ
VIEW
RFQ
3,104
In-stock
Microsemi Corporation MOSFET N-CH 1000V 32A TO264 POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-264-3, TO-264AA TO-264 1040W (Tc) N-Channel - 1000V 32A (Tc) 400 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 8500pF @ 25V 10V ±30V
APT29F100B2
RFQ
VIEW
RFQ
2,958
In-stock
Microsemi Corporation MOSFET N-CH 1000V 30A T-MAX POWER MOS 8™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-247-3 Variant T-MAX™ [B2] 1040W (Tc) N-Channel - 1000V 30A (Tc) 440 mOhm @ 16A, 10V 5V @ 2.5mA 260nC @ 10V 8500pF @ 25V 10V ±30V