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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF620L	RFQ VIEW	PDF RFQ	1,401 In-stock	Vishay Siliconix	MOSFET N-CH 200V 5.2A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK	-	N-Channel	200V	5.2A (Tc)	800 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRFD220	RFQ VIEW	PDF RFQ	1,204 In-stock	Vishay Siliconix	MOSFET N-CH 200V 800MA 4-DIP		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP, Hexdip, HVMDIP	1W (Ta)	N-Channel	200V	800mA (Ta)	800 mOhm @ 480mA, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRFI620	RFQ VIEW	PDF RFQ	630 In-stock	Vishay Siliconix	MOSFET N-CH 200V 4.1A TO220FP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	30W (Tc)	N-Channel	200V	4.1A (Tc)	800 mOhm @ 2.5A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRFI620GPBF	RFQ VIEW	PDF RFQ	3,173 In-stock	Vishay Siliconix	MOSFET N-CH 200V 4.1A TO220FP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	30W (Tc)	N-Channel	200V	4.1A (Tc)	800 mOhm @ 2.5A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRFI620G	RFQ VIEW	PDF RFQ	943 In-stock	Vishay Siliconix	MOSFET N-CH 200V 4.1A TO220FP		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack, Isolated Tab	TO-220-3	30W (Tc)	N-Channel	200V	4.1A (Tc)	800 mOhm @ 2.5A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRF620S	RFQ VIEW	PDF RFQ	3,381 In-stock	Vishay Siliconix	MOSFET N-CH 200V 5.2A D2PAK		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3W (Ta), 50W (Tc)	N-Channel	200V	5.2A (Tc)	800 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRF620SPBF	RFQ VIEW	PDF RFQ	981 In-stock	Vishay Siliconix	MOSFET N-CH 200V 5.2A D2PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	3W (Ta), 50W (Tc)	N-Channel	200V	5.2A (Tc)	800 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRFU220PBF	RFQ VIEW	PDF RFQ	1,374 In-stock	Vishay Siliconix	MOSFET N-CH 200V 4.8A I-PAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	TO-251AA	2.5W (Ta), 42W (Tc)	N-Channel	200V	4.8A (Tc)	800 mOhm @ 2.9A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRFD220PBF	RFQ VIEW	PDF RFQ	601 In-stock	Vishay Siliconix	MOSFET N-CH 200V 800MA 4-DIP		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	4-DIP (0.300", 7.62mm)	4-DIP, Hexdip, HVMDIP	1W (Ta)	N-Channel	200V	800mA (Ta)	800 mOhm @ 480mA, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRF620PBF	RFQ VIEW	PDF RFQ	2,649 In-stock	Vishay Siliconix	MOSFET N-CH 200V 5.2A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	50W (Tc)	N-Channel	200V	5.2A (Tc)	800 mOhm @ 3.1A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V
	IRFR220PBF	RFQ VIEW	PDF RFQ	3,333 In-stock	Vishay Siliconix	MOSFET N-CH 200V 4.8A DPAK		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	2.5W (Ta), 42W (Tc)	N-Channel	200V	4.8A (Tc)	800 mOhm @ 2.9A, 10V	4V @ 250µA	14nC @ 10V	260pF @ 25V	10V	±20V

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