Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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812
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ON Semiconductor SUPERFET3 650V IPAK PKG SuperFET® III Active - MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 54W (Tc) N-Channel - 650V 6A (Tc) 600 mOhm @ 3A, 10V 4.5V @ 600µA 11nC @ 10V 465pF @ 400V 10V ±30V
TK8Q65W,S1Q
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1,139
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 7.8A IPAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 80W (Tc) N-Channel - 650V 7.8A (Ta) 670 mOhm @ 3.9A, 10V 3.5V @ 300µA 16nC @ 10V 570pF @ 300V 10V ±30V
TK6Q65W,S1Q
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RFQ
2,940
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 5.8A IPAK-OS DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 60W (Tc) N-Channel - 650V 5.8A (Ta) 1.05 Ohm @ 2.9A, 10V 3.5V @ 180µA 11nC @ 10V 390pF @ 300V 10V ±30V
TK5Q65W,S1Q
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RFQ
3,332
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Toshiba Semiconductor and Storage MOSFET N-CH 650V 5.2A IPAK DTMOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak I-PAK 60W (Tc) N-Channel - 650V 5.2A (Ta) 1.22 Ohm @ 2.6A, 10V 3.5V @ 170µA 10.5nC @ 10V 380pF @ 300V 10V ±30V