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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,207
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 4A IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 98.4W (Tc) | N-Channel | - | 650V | 4A (Tc) | 2.4 Ohm @ 2A, 10V | 5V @ 250µA | 15nC @ 10V | 642pF @ 25V | 10V | ±30V | |||
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VIEW |
3,651
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 1.8A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 52W (Tc) | N-Channel | - | 650V | 1.8A (Tc) | 4.6 Ohm @ 900mA, 10V | 5V @ 250µA | 8.5nC @ 10V | 353pF @ 25V | 10V | ±30V | |||
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VIEW |
1,748
In-stock
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Global Power Technologies Group | MOSFET N-CH 650V 5.5A IPAK | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 120W (Tc) | N-Channel | - | 650V | 5.5A (Tc) | 1.6 Ohm @ 2.75A, 10V | 4V @ 250µA | 17nC @ 10V | 1177pF @ 25V | 10V | ±30V | |||
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VIEW |
1,517
In-stock
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STMicroelectronics | MOSFET N-CH 650V IPAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 70W (Tc) | N-Channel | - | 650V | 6A (Tc) | 1.3 Ohm @ 2.7A, 10V | 4.5V @ 50µA | 34nC @ 10V | 895pF @ 100V | 10V | ±30V | |||
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VIEW |
812
In-stock
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ON Semiconductor | SUPERFET3 650V IPAK PKG | SuperFET® III | Active | - | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 54W (Tc) | N-Channel | - | 650V | 6A (Tc) | 600 mOhm @ 3A, 10V | 4.5V @ 600µA | 11nC @ 10V | 465pF @ 400V | 10V | ±30V | |||
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VIEW |
1,139
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 7.8A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 80W (Tc) | N-Channel | - | 650V | 7.8A (Ta) | 670 mOhm @ 3.9A, 10V | 3.5V @ 300µA | 16nC @ 10V | 570pF @ 300V | 10V | ±30V | |||
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VIEW |
2,940
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.8A IPAK-OS | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.8A (Ta) | 1.05 Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | 390pF @ 300V | 10V | ±30V | |||
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VIEW |
3,332
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 650V 5.2A IPAK | DTMOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | I-PAK | 60W (Tc) | N-Channel | - | 650V | 5.2A (Ta) | 1.22 Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | 380pF @ 300V | 10V | ±30V | |||
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VIEW |
3,016
In-stock
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STMicroelectronics | MOSFET N-CH 650V 5.4A IPAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | I-PAK | 110W (Tc) | N-Channel | - | 650V | 5.4A (Tc) | 1.3 Ohm @ 2.7A, 10V | 4.5V @ 50µA | 33nC @ 10V | 880pF @ 50V | 10V | ±30V | |||
