- Manufacture :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
3,430
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 2.7A TO-262 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | - | N-Channel | - | 250V | 2.7A (Tc) | 2 Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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|
VIEW |
847
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 3.3A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 3W (Ta), 36W (Tc) | N-Channel | - | 200V | 3.3A (Tc) | 1.5 Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | 10V | ±20V | |||
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VIEW |
2,026
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 600V 7A TO262 | aMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 104W (Tc) | N-Channel | - | 600V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2nC @ 10V | 372pF @ 100V | 10V | ±30V | |||
