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IRF610L

Discrete Semiconductor Products TO-262-3 Long Leads, I²Pak, TO-262AA

Manufacturer No:: IRF610L

Manufacturer:: Vishay Siliconix

Product Category:: Transistors - FETs, MOSFETs - Single

Description:: MOSFET N-CH 200V 3.3A TO-262

RoHs Status:

Datasheet:: IRF610L Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Single	Manufacturer :	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :	3.3A (Tc)	Drain to Source Voltage (Vdss) :	200V
Drive Voltage (Max Rds On, Min Rds On) :	10V	FET Feature :	-
FET Type :	N-Channel	Gate Charge (Qg) (Max) @ Vgs :	8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :	140pF @ 25V	Mounting Type :	Through Hole
Operating Temperature :	-55°C ~ 150°C (TJ)	Package / Case :	TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging :	Tube	Part Status :	Obsolete
Power Dissipation (Max) :	3W (Ta), 36W (Tc)	Rds On (Max) @ Id, Vgs :	1.5 Ohm @ 2A, 10V
Series :	-	Supplier Device Package :	TO-262
Technology :	MOSFET (Metal Oxide)	Vgs (Max) :	±20V
Vgs(th) (Max) @ Id :	4V @ 250µA

IRF610L has the following characteristics

IRF610Lis produced byVishay Siliconix, belongs to Transistors - FETs, MOSFETs - Single, and its best working temperature is -55°C ~ 150°C (TJ), the size is TO-262-3 Long Leads, I²Pak, TO-262AA, and Tube is its most common packaging method, which belongs to the - series, using TO-262.

IRF610L Product Detail:

IRF610L is a Transistors - FETs, MOSFETs - Single, Buffer Amps, Designed and produced by Vishay Siliconix. The IRF610L produced by Vishay Siliconix can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The IRF610L of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the IRF610L Datasheet （PDF)， IRF610L price, IRF610L pinout, IRF610L manual, and IRF610L replacement Solution.

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