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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IRF614L	RFQ VIEW	PDF RFQ	3,430 In-stock	Vishay Siliconix	MOSFET N-CH 250V 2.7A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	-	N-Channel	250V	2.7A (Tc)	2 Ohm @ 1.6A, 10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	10V	±20V
	IRF610L	RFQ VIEW	PDF RFQ	847 In-stock	Vishay Siliconix	MOSFET N-CH 200V 3.3A TO-262		-	Obsolete	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	3W (Ta), 36W (Tc)	N-Channel	200V	3.3A (Tc)	1.5 Ohm @ 2A, 10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	10V	±20V
	IRF540L	RFQ VIEW	PDF RFQ	911 In-stock	Vishay Siliconix	MOSFET N-CH 100V 28A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	-	N-Channel	100V	28A (Tc)	77 mOhm @ 17A, 10V	4V @ 250µA	72nC @ 10V	1700pF @ 25V	10V	±20V
	IRF530L	RFQ VIEW	PDF RFQ	2,485 In-stock	Vishay Siliconix	MOSFET N-CH 100V 14A TO-262		-	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	TO-262	-	N-Channel	100V	14A (Tc)	160 mOhm @ 8.4A, 10V	4V @ 250µA	26nC @ 10V	670pF @ 25V	10V	±20V

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