- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,533
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 500V 3A DPAK-3 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 500V | 3A (Ta) | 3 Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7nC @ 10V | 280pF @ 25V | 10V | ±30V | |||
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1,171
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 2A PW-MOLD | π-MOSVII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PW-MOLD | 60W (Tc) | N-Channel | - | 600V | 2A (Ta) | 4.3 Ohm @ 1A, 10V | 4.4V @ 1mA | 7nC @ 10V | 280pF @ 25V | 10V | ±30V |