Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK3P50D,RQ(S
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Toshiba Semiconductor and Storage MOSFET N-CH 500V 3A DPAK-3 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 500V 3A (Ta) 3 Ohm @ 1.5A, 10V 4.4V @ 1mA 7nC @ 10V 280pF @ 25V 10V ±30V
TK2Q60D(Q)
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 2A PW-MOLD π-MOSVII Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PW-MOLD2 60W (Tc) N-Channel - 600V 2A (Ta) 4.3 Ohm @ 1A, 10V 4.4V @ 1mA 7nC @ 10V 280pF @ 25V 10V ±30V
TK2P60D(TE16L1,NQ)
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 2A PW-MOLD π-MOSVII Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 60W (Tc) N-Channel - 600V 2A (Ta) 4.3 Ohm @ 1A, 10V 4.4V @ 1mA 7nC @ 10V 280pF @ 25V 10V ±30V