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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	IXTP1N100P	RFQ VIEW	PDF RFQ	2,863 In-stock	IXYS	MOSFET N-CH 1000V 1A TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	50W (Tc)	N-Channel	-	1000V	1A (Tc)	15 Ohm @ 500mA, 10V	4.5V @ 50µA	15.5nC @ 10V	331pF @ 25V	10V	±20V
	IXTP08N120P	RFQ VIEW	PDF RFQ	3,355 In-stock	IXYS	MOSFET N-CH 1200V 800MA TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	50W (Tc)	N-Channel	-	1200V	800mA (Tc)	25 Ohm @ 500mA, 10V	4.5V @ 50µA	14nC @ 10V	333pF @ 25V	10V	±20V
	IXTP1R4N100P	RFQ VIEW	PDF RFQ	3,172 In-stock	IXYS	MOSFET N-CH 1000V 1.4A TO-220		Polar™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	63W (Tc)	N-Channel	-	1000V	1.4A (Tc)	11 Ohm @ 500mA, 10V	4.5V @ 50µA	17.8nC @ 10V	450pF @ 25V	10V	±20V
	IXTP1N120P	RFQ VIEW	PDF RFQ	3,002 In-stock	IXYS	MOSFET N-CH 1200V 1A TO-220		PolarVHV™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	63W (Tc)	N-Channel	-	1200V	1A (Tc)	20 Ohm @ 500mA, 10V	4.5V @ 50µA	17.6nC @ 10V	550pF @ 25V	10V	±20V
	IXTP06N120P	RFQ VIEW	PDF RFQ	1,647 In-stock	IXYS	MOSFET N-CH 1200V 600MA TO-220		PolarVHV™	Active	Tube	MOSFET (Metal Oxide)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220AB	42W (Tc)	N-Channel	-	1200V	600mA (Tc)	32 Ohm @ 500mA, 10V	4.5V @ 50µA	13.3nC @ 10V	270pF @ 25V	10V	±20V

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