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IXTP1R4N100P

Discrete Semiconductor Products TO-220-3

Manufacturer No:: IXTP1R4N100P

Manufacturer:: IXYS

Product Category:: Transistors - FETs, MOSFETs - Single

Description:: MOSFET N-CH 1000V 1.4A TO-220

RoHs Status:: Lead Free / RoHS Compliant

Datasheet:: IXTP1R4N100P Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Single	Manufacturer :	IXYS
Current - Continuous Drain (Id) @ 25°C :	1.4A (Tc)	Drain to Source Voltage (Vdss) :	1000V
Drive Voltage (Max Rds On, Min Rds On) :	10V	FET Feature :	-
FET Type :	N-Channel	Gate Charge (Qg) (Max) @ Vgs :	17.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :	450pF @ 25V	Mounting Type :	Through Hole
Operating Temperature :	-55°C ~ 150°C (TJ)	Package / Case :	TO-220-3
Packaging :	Tube	Part Status :	Active
Power Dissipation (Max) :	63W (Tc)	Rds On (Max) @ Id, Vgs :	11 Ohm @ 500mA, 10V
Series :	Polar™	Supplier Device Package :	TO-220AB
Technology :	MOSFET (Metal Oxide)	Vgs (Max) :	±20V
Vgs(th) (Max) @ Id :	4.5V @ 50µA

IXTP1R4N100P has the following characteristics

IXTP1R4N100Pis produced byIXYS, belongs to Transistors - FETs, MOSFETs - Single, and its best working temperature is -55°C ~ 150°C (TJ), the size is TO-220-3, and Tube is its most common packaging method, which belongs to the Polar™ series, using TO-220AB.

IXTP1R4N100P Product Detail:

IXTP1R4N100P is a Transistors - FETs, MOSFETs - Single, Buffer Amps, Designed and produced by IXYS. The IXTP1R4N100P produced by IXYS can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The IXTP1R4N100P of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the IXTP1R4N100P Datasheet （PDF)， IXTP1R4N100P price, IXTP1R4N100P pinout, IXTP1R4N100P manual, and IXTP1R4N100P replacement Solution.

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