Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IRFSL4410PBF
RFQ
VIEW
RFQ
931
In-stock
Infineon Technologies MOSFET N-CH 100V 88A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 100V 88A (Tc) 10 mOhm @ 58A, 10V 4V @ 150µA 180nC @ 10V 5150pF @ 50V 10V ±20V
AUIRFB4410
RFQ
VIEW
RFQ
3,912
In-stock
Infineon Technologies MOSFET N-CH 100V 75A TO220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 100V 75A (Tc) 10 mOhm @ 58A, 10V 4V @ 150µA 180nC @ 10V 5150pF @ 50V 10V ±20V
IRF3710LPBF
RFQ
VIEW
RFQ
817
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-262 HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 100V 57A (Tc) 23 mOhm @ 28A, 10V 4V @ 250µA 130nC @ 10V 3130pF @ 25V 10V ±20V
IRF3710L
RFQ
VIEW
RFQ
941
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-262 HEXFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-262-3 Long Leads, I²Pak, TO-262AA TO-262 200W (Tc) N-Channel - 100V 57A (Tc) 23 mOhm @ 28A, 10V 4V @ 250µA 130nC @ 10V 3130pF @ 25V 10V ±20V
IRL2910PBF
RFQ
VIEW
RFQ
1,848
In-stock
Infineon Technologies MOSFET N-CH 100V 55A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 100V 55A (Tc) 26 mOhm @ 29A, 10V 2V @ 250µA 140nC @ 5V 3700pF @ 25V 4V, 10V ±16V
IRF3710PBF
RFQ
VIEW
RFQ
3,379
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 100V 57A (Tc) 23 mOhm @ 28A, 10V 4V @ 250µA 130nC @ 10V 3130pF @ 25V 10V ±20V
IRFP3710PBF
RFQ
VIEW
RFQ
730
In-stock
Infineon Technologies MOSFET N-CH 100V 57A TO-247AC HEXFET® Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 200W (Tc) N-Channel - 100V 57A (Tc) 25 mOhm @ 28A, 10V 4V @ 250µA 190nC @ 10V 3000pF @ 25V 10V ±20V
IRFB4410PBF
RFQ
VIEW
RFQ
2,381
In-stock
Infineon Technologies MOSFET N-CH 100V 96A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) N-Channel - 100V 88A (Tc) 10 mOhm @ 58A, 10V 4V @ 150µA 180nC @ 10V 5150pF @ 50V 10V ±20V
IRF5210PBF
RFQ
VIEW
RFQ
1,806
In-stock
Infineon Technologies MOSFET P-CH 100V 40A TO-220AB HEXFET® Active Tube MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Through Hole TO-220-3 TO-220AB 200W (Tc) P-Channel - 100V 40A (Tc) 60 mOhm @ 24A, 10V 4V @ 250µA 180nC @ 10V 2700pF @ 25V 10V ±20V