- Part Status :
- Package / Case :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
931
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 88A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
|
VIEW |
2,643
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 100V 63A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 63A (Tc) | 19 mOhm @ 25A, 10V | 2V @ 1mA | - | 6385pF @ 25V | 4.5V, 10V | ±10V | |||
|
VIEW |
2,096
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 56A TO-247 | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,755
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 56A TO-220AB | UltraFET™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,912
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 75A TO220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 75A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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|
VIEW |
817
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
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|
VIEW |
941
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 57A TO-262 | HEXFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262 | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
|
VIEW |
964
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 56A TO220-3 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
1,848
In-stock
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Infineon Technologies | MOSFET N-CH 100V 55A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 55A (Tc) | 26 mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | 4V, 10V | ±16V | |||
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|
VIEW |
2,485
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 100V 63A TO220AB | TrenchMOS™ | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 63A (Tc) | 20 mOhm @ 25A, 10V | 4V @ 1mA | - | 4373pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,415
In-stock
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ON Semiconductor | MOSFET N-CH 100V 56A TO-247 | UltraFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247 | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,920
In-stock
|
ON Semiconductor | MOSFET N-CH 100V 56A TO-262AA | UltraFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,592
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 131A TO-220 | ThunderFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 131A (Tc) | 5.8 mOhm @ 30A, 10V | 4V @ 250µA | 81nC @ 10V | 3330pF @ 50V | 7.5V, 10V | ±20V | |||
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|
VIEW |
3,379
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 23 mOhm @ 28A, 10V | 4V @ 250µA | 130nC @ 10V | 3130pF @ 25V | 10V | ±20V | |||
|
VIEW |
730
In-stock
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Infineon Technologies | MOSFET N-CH 100V 57A TO-247AC | HEXFET® | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247AC | 200W (Tc) | N-Channel | - | 100V | 57A (Tc) | 25 mOhm @ 28A, 10V | 4V @ 250µA | 190nC @ 10V | 3000pF @ 25V | 10V | ±20V | |||
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VIEW |
970
In-stock
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ON Semiconductor | MOSFET N-CH 100V 56A TO-220AB | UltraFET™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 56A (Tc) | 25 mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | 2000pF @ 25V | 10V | ±20V | |||
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|
VIEW |
2,381
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 96A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | N-Channel | - | 100V | 88A (Tc) | 10 mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,806
In-stock
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Infineon Technologies | MOSFET P-CH 100V 40A TO-220AB | HEXFET® | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 200W (Tc) | P-Channel | - | 100V | 40A (Tc) | 60 mOhm @ 24A, 10V | 4V @ 250µA | 180nC @ 10V | 2700pF @ 25V | 10V | ±20V | |||
