Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
GB10SLT12-220
RFQ
VIEW
RFQ
3,563
In-stock
GeneSiC Semiconductor DIODE SCHOTTKY 1200V 10A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 10A 1.8V @ 10A 40µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 520pF @ 1V, 1MHz
IDH08G120C5XKSA1
RFQ
VIEW
RFQ
1,682
In-stock
Infineon Technologies DIODE SCHOTTKY 1200V 8A TO220-2 thinQ!™ Active Tube Through Hole TO-220-2 PG-TO220-2-1 Silicon Carbide Schottky 8A (DC) 1.95V @ 8A 40µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 365pF @ 1V, 1MHz
GP2D020A120B
RFQ
VIEW
RFQ
2,804
In-stock
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 20A TO247-2 Amp+™ Active Tube Through Hole TO-247-2 TO-247-2 Silicon Carbide Schottky 20A (DC) 1.8V @ 20A 40µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1270pF @ 1V, 1MHz
GP2D020A120A
RFQ
VIEW
RFQ
1,804
In-stock
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 20A TO220-2 Amp+™ Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 20A (DC) 1.8V @ 20A 40µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 1270pF @ 1V, 1MHz