- Part Status :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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10 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,469
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 30A TO247AC | HEXFRED® | Obsolete | Tube | Through Hole | TO-247-2 | TO-247AC Modified | Standard | 30A | 4.1V @ 30A | 40µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 170ns | -55°C ~ 150°C | - | |||
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|
VIEW |
1,348
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 30A TO247AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-247-2 | TO-247AC Modified | Standard | 30A | 4.1V @ 30A | 40µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 170ns | -55°C ~ 150°C | - | |||
|
VIEW |
3,563
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
VIEW |
1,544
In-stock
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IXYS | DIODE GEN PURP 1.2KV 30A TO263 | - | Active | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 30A | 1.29V @ 30A | 40µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | 10pF @ 400V, 1MHz | |||
|
VIEW |
2,821
In-stock
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IXYS | DIODE GEN PURP 1.2KV 30A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 30A | 1.29V @ 30A | 40µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -40°C ~ 175°C | 10pF @ 400V, 1MHz | |||
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|
VIEW |
2,873
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 30A TO247AC | Automotive, AEC-Q101 | Active | Tube | Through Hole | TO-247-2 | TO-247AC Modified | Standard | 30A | 4.1V @ 30A | 40µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 170ns | -55°C ~ 150°C | - | |||
|
VIEW |
1,682
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 8A TO220-2 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.95V @ 8A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 365pF @ 1V, 1MHz | |||
|
VIEW |
2,804
In-stock
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Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 20A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 20A (DC) | 1.8V @ 20A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1270pF @ 1V, 1MHz | |||
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|
VIEW |
3,922
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 30A TO247AC | HEXFRED® | Active | Tube | Through Hole | TO-247-2 | TO-247AC Modified | Standard | 30A | 4.1V @ 30A | 40µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 170ns | -55°C ~ 150°C | - | |||
|
VIEW |
1,804
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 20A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 20A (DC) | 1.8V @ 20A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1270pF @ 1V, 1MHz | |||
