- Part Status :
- Mounting Type :
- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
-
- 1.19V @ 60A (1)
- 1.75V @ 10A (2)
- 1.75V @ 15A (2)
- 1.75V @ 20A (1)
- 1.75V @ 8A (4)
- 1.7V @ 10A (6)
- 1.7V @ 2A (1)
- 1.7V @ 5A (6)
- 1.8V @ 10A (3)
- 1.8V @ 10kHz (1)
- 1.8V @ 1A (10)
- 1.8V @ 20A (1)
- 1.8V @ 2A (6)
- 1.8V @ 50A (1)
- 2.5V @ 15A (1)
- 2.5V @ 30A (1)
- 2.5V @ 60A (2)
- 2V @ 10A (1)
- 2V @ 20A (1)
- 3.1V @ 75A (1)
- 3.3V @ 15A (2)
- 3.3V @ 30A (2)
- 3.3V @ 40A (1)
- 3.3V @ 60A (1)
- 3.4V @ 1A (1)
- Capacitance @ Vr, F :
-
- 104pF @ 400V, 1MHz (1)
- 1220pF @ 1V, 100KHz (1)
- 131pF @ 1V, 1MHz (6)
- 136pF @ 0V, 1MHz (1)
- 138pF @ 1V, 1MHz (1)
- 1740pF @ 1V, 100kHz (1)
- 2250pF @ 1V, 100kHz (1)
- 240pF @ 1V, 1MHz (4)
- 2560pF @ 1V, 100kHz (1)
- 260pF @ 1V, 1MHz (2)
- 2940pF @ 1V, 1MHz (1)
- 33pF @ 400V, 1MHz (1)
- 41pF @ 600V, 1MHz (1)
- 475pF @ 0V, 1MHz (2)
- 500pF @ 1V, 1MHz (4)
- 520pF @ 1V, 1MHz (2)
- 538pF @ 1V, 100kHz (4)
- 612pF @ 1V, 100kHz (2)
- 630pF @ 1V, 1MHz (1)
- 69pF @ 1V, 1MHz (7)
- 780pF @ 0V, 1MHz (2)
- 936pF @ 1V, 100kHz (2)
- 968pF @ 1V, 1MHz (1)
- Applied Filters :
62 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
1,098
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | |||
|
VIEW |
3,634
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | - | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 10A | 2V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
VIEW |
3,259
In-stock
|
ON Semiconductor | 1200V 10A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 17A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
|
VIEW |
2,776
In-stock
|
IXYS | DIODE GEN PURP 1200V 60A TO247AD | - | Active | Tube | Through Hole | TO-247-2 | TO-247AD | Standard | 60A | 1.19V @ 60A | 30µA @ 1200V | 1200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 175°C | 33pF @ 400V, 1MHz | |||
|
|
VIEW |
1,899
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
|
|
VIEW |
2,886
In-stock
|
ON Semiconductor | 1200V 40A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 61A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2250pF @ 1V, 100kHz | |||
|
VIEW |
3,433
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
|
VIEW |
3,788
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
693
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 60A D3 | - | Active | Tube | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | Standard | 60A | 2.5V @ 60A | 250µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 400ns | -55°C ~ 175°C | - | |||
|
VIEW |
3,563
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
|
VIEW |
3,117
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO220 | - | Active | Tube | Through Hole | TO-220-3 | TO-220 [K] | Standard | 30A | 3.3V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
660
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
VIEW |
2,914
In-stock
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 5A TO252 | - | Active | Bulk | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
|
VIEW |
3,113
In-stock
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 5A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 5A | 1.7V @ 5A | 190µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
|
VIEW |
1,643
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 | Standard | 30A | 2.5V @ 30A | 250µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 370ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
1,282
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 60A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 60A | 3.3V @ 60A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
|
VIEW |
854
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 1A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Standard | 1A | 3.4V @ 1A | 5µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
1,209
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | Silicon Carbide Schottky | 18A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
|
|
VIEW |
948
In-stock
|
ON Semiconductor | 1200V 8A SIC SBD | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 22.5A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
|
VIEW |
3,418
In-stock
|
ON Semiconductor | 1200V 8A SIC SBD | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 22.5A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
|
VIEW |
1,977
In-stock
|
ON Semiconductor | 1200V 8A SIC SBD | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 22.5A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
|
VIEW |
2,562
In-stock
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | Silicon Carbide Schottky | 6.2A (DC) | 1.7V @ 2A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 136pF @ 0V, 1MHz | |||
|
VIEW |
3,131
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 15A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220 [K] | Standard | 15A | 3.3V @ 15A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 240ns | -55°C ~ 175°C | - | |||
|
VIEW |
2,525
In-stock
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
|
|
VIEW |
1,513
In-stock
|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-220 | - | Active | - | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10kHz | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,618
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 30A TO247 | - | Active | Tube | Through Hole | TO-247-2 | TO-247 [B] | Standard | 30A | 3.3V @ 30A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 320ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
2,294
In-stock
|
Microsemi Corporation | DIODE GEN PURP 1.2KV 15A TO220 | - | Active | Tube | Through Hole | TO-220-3 | TO-220 [K] | Standard | 15A | 2.5V @ 15A | 250µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 260ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
1,398
In-stock
|
ON Semiconductor | 1200V 50A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 77A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2560pF @ 1V, 100kHz | |||
|
|
VIEW |
3,610
In-stock
|
ON Semiconductor | 1200V 30A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 46A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1740pF @ 1V, 100kHz | |||
|
|
VIEW |
2,798
In-stock
|
ON Semiconductor | 1200V 15A SIC SBD | - | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 26A (DC) | 1.75V @ 15A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 936pF @ 1V, 100kHz | |||
