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- Diode Type :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
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13 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
1,899
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 475pF @ 0V, 1MHz | |||
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VIEW |
3,788
In-stock
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Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | |||
|
VIEW |
3,563
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
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VIEW |
660
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
|
VIEW |
3,131
In-stock
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Microsemi Corporation | DIODE GEN PURP 1.2KV 15A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220 [K] | Standard | 15A | 3.3V @ 15A | 100µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 240ns | -55°C ~ 175°C | - | |||
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VIEW |
1,513
In-stock
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Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-220 | - | Active | - | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10kHz | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | - | |||
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VIEW |
3,297
In-stock
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 8A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.75V @ 8A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 538pF @ 1V, 100kHz | |||
|
VIEW |
978
In-stock
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Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 41pF @ 600V, 1MHz | |||
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VIEW |
874
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 2A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 138pF @ 1V, 1MHz | |||
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VIEW |
1,485
In-stock
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 15A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 15A (DC) | 1.75V @ 15A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 936pF @ 1V, 100kHz | |||
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VIEW |
1,334
In-stock
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A (DC) | 1.75V @ 10A | 200µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 612pF @ 1V, 100kHz | |||
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VIEW |
2,833
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
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VIEW |
711
In-stock
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ON Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 20A | 1.75V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1220pF @ 1V, 100KHz | |||
