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5 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
854
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 1.2KV 1A SOD57 | - | Active | Tape & Reel (TR) | Through Hole | SOD-57, Axial | SOD-57 | Standard | 1A | 3.4V @ 1A | 5µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 175°C | - | |||
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VIEW |
1,229
In-stock
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
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VIEW |
1,159
In-stock
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
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VIEW |
1,332
In-stock
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252 | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
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VIEW |
2,833
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz |