Supplier Device Package :
Current - Reverse Leakage @ Vr :
Voltage - DC Reverse (Vr) (Max) :
Reverse Recovery Time (trr) :
Operating Temperature - Junction :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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Taiwan Semiconductor Corporation DIODE GEN PURP 500V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
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STMicroelectronics DIODE GEN PURP 600V 4A POWERFLAT - Active Tape & Reel (TR) Surface Mount 8-PowerVDFN PowerFlat™ (3.3x3.3) Standard 4A 1.7V @ 4A 3µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns 150°C (Max) -