- Series :
- Part Status :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Current - Average Rectified (Io) :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,116
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 4A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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VIEW |
2,011
In-stock
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WeEn Semiconductors | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
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VIEW |
1,404
In-stock
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WeEn Semiconductors | DIODE SCHOTTKY 650V 4A D2PAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
|
VIEW |
1,620
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
3,933
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
823
In-stock
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Infineon Technologies | DIODE SCHOTTKY 650V 4A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 70µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 130pF @ 1V, 1MHz | |||
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|
VIEW |
2,838
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
2,008
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | - | Active | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
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VIEW |
1,273
In-stock
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STMicroelectronics | DIODE GEN PURP 600V 4A POWERFLAT | - | Active | Tape & Reel (TR) | Surface Mount | 8-PowerVDFN | PowerFlat™ (3.3x3.3) | Standard | 4A | 1.7V @ 4A | 3µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | 150°C (Max) | - | |||
