Reverse Recovery Time (trr) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A SUB SMA - Active Cut Tape (CT) Surface Mount DO-219AB Sub SMA Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz
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1,505
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A SUB SMA - Active Cut Tape (CT) Surface Mount DO-219AB Sub SMA Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 20pF @ 4V, 1MHz
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1,987
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Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1A SUB SMA - Active Cut Tape (CT) Surface Mount DO-219AB Sub SMA Standard 1A 950mV @ 1A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 10pF @ 4V, 1MHz