- Series :
- Current - Reverse Leakage @ Vr :
- Capacitance @ Vr, F :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
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VIEW |
3,450
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A SUB SMA | Automotive, AEC-Q101 | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
1,316
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
2,642
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
1,505
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,139
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
1,065
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
1,781
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
665
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
2,131
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
622
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
1,987
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 1A SUB SMA | - | Active | Cut Tape (CT) | Surface Mount | DO-219AB | Sub SMA | Standard | 1A | 950mV @ 1A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz |