Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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IDW10S120FKSA1
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RFQ
2,474
In-stock
Infineon Technologies DIODE SCHOTTKY 1200V 10A TO247-3 thinQ!™ Obsolete Tube Through Hole TO-247-3 PG-TO247-3 Silicon Carbide Schottky 10A (DC) 1.8V @ 10A 240µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 580pF @ 1V, 1MHz
IDH10S120AKSA1
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RFQ
2,337
In-stock
Infineon Technologies DIODE SCHOTTKY 1200V 10A TO220-2 thinQ!™ Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Silicon Carbide Schottky 10A (DC) 1.8V @ 10A 240µA @ 1200V 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 500pF @ 1V, 1MHz
IDB10S60C
RFQ
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RFQ
3,790
In-stock
Infineon Technologies DIODE SILICON 600V 10A D2PAK thinQ!™ Obsolete Tape & Reel (TR) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 140µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 480pF @ 1V, 1MHz
SDT10S60
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RFQ
2,181
In-stock
Infineon Technologies DIODE SCHOTTKY 600V 10A TO220-2 thinQ!™ Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 350µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 350pF @ 0V, 1MHz
SDP10S30
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RFQ
2,167
In-stock
Infineon Technologies DIODE SCHOTTKY 300V 10A TO220-3 thinQ!™ Obsolete Tube Through Hole TO-220-3 PG-TO220-3 Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 200µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 600pF @ 0V, 1MHz
SDT10S30
RFQ
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RFQ
2,484
In-stock
Infineon Technologies DIODE SCHOTTKY 300V 10A TO220-2 thinQ!™ Obsolete Tube Through Hole TO-220-2 PG-TO220-2 Silicon Carbide Schottky 10A (DC) 1.7V @ 10A 200µA @ 300V 300V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 600pF @ 0V, 1MHz