- Series :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Diode Type :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
- Applied Filters :
26 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,474
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO247-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 580pF @ 1V, 1MHz | |||
|
VIEW |
2,337
In-stock
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Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | |||
|
VIEW |
3,790
In-stock
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Infineon Technologies | DIODE SILICON 600V 10A D2PAK | thinQ!™ | Obsolete | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 140µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 1V, 1MHz | |||
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VIEW |
2,181
In-stock
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Infineon Technologies | DIODE SCHOTTKY 600V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 350µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 350pF @ 0V, 1MHz | |||
|
VIEW |
2,167
In-stock
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Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-3 | PG-TO220-3 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 0V, 1MHz | |||
|
VIEW |
1,493
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.35V @ 6.5A | 250µA @ 1300V | 1500V | Fast Recovery = 200mA (Io) | 220ns | 150°C (Max) | - | |||
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|
VIEW |
3,297
In-stock
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NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220FP | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
|
VIEW |
1,492
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
3,295
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
1,657
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
1,021
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
3,260
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
3,147
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
3,415
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
2,104
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 60V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.58V @ 10A | 1mA @ 60V | 60V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 345pF @ 10V, 1MHz | |||
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|
VIEW |
1,575
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
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|
VIEW |
602
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
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|
VIEW |
875
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
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|
VIEW |
2,692
In-stock
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Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
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|
VIEW |
1,505
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 40V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.55V @ 10A | 1mA @ 40V | 40V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 420pF @ 10V, 1MHz | |||
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|
VIEW |
1,970
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
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|
VIEW |
748
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
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|
VIEW |
1,894
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Tape & Reel (TR) | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
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|
VIEW |
3,695
In-stock
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 30V 10A L-FLAT | - | Obsolete | Bulk | Surface Mount | L-FLAT™ | L-FLAT™ (4x5.5) | Schottky | 10A (DC) | 0.47V @ 10A | 1mA @ 30V | 30V | Fast Recovery = 200mA (Io) | - | -40°C ~ 125°C | 530pF @ 10V, 1MHz | |||
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|
VIEW |
2,484
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 300V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 200µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 600pF @ 0V, 1MHz | |||
|
VIEW |
1,221
In-stock
|
NXP USA Inc. | DIODE GEN PURP 1.5KV 10A TO220AC | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A (DC) | 1.8V @ 20A | 100µA @ 1300V | 1500V | Standard Recovery >500ns, > 200mA (Io) | 600ns | 150°C (Max) | - | |||
