Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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3,193
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Global Power Technologies Group DIODE SCHOTTKY 650V 30A TO220-2 Amp+™ Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 30A (DC) 1.65V @ 10A 100µA @ 650V 650V No Recovery Time > 500mA (Io) - -55°C ~ 175°C 527pF @ 1V, 1MHz
GP2D010A060A
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1,760
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Global Power Technologies Group DIODE SCHOTTKY 600V 30A TO220-2 Amp+™ Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 30A (DC) 1.65V @ 10A 40µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -50°C ~ 175°C 527pF @ 1V, 1MHz
MSC030SDA120K
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1,513
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Microsemi Corporation UNRLS, FG, GEN2, SIC SBD, TO-220 - Active - Through Hole TO-220-2 TO-220AC Silicon Carbide Schottky 30A (DC) 1.8V @ 10kHz - 1200V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C -
C3D10060A
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RFQ
1,381
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Cree/Wolfspeed DIODE SCHOTTKY 600V 10A TO220-2 Z-Rec® Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 30A (DC) 1.8V @ 10A 50µA @ 600V 600V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 480pF @ 0V, 1MHz
FFSP3065A
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1,372
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ON Semiconductor DIODE SCHOTTKY 650V 30A TO220-2 - Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 30A (DC) 1.75V @ 30A 200µA @ 650V 650V Fast Recovery = 200mA (Io) - -55°C ~ 175°C 1705pF @ 1V, 100kHz
C3D10065A
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RFQ
1,482
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Cree/Wolfspeed DIODE SCHOTTKY 650V 10A TO220-2 Z-Rec® Active Tube Through Hole TO-220-2 TO-220-2 Silicon Carbide Schottky 30A (DC) 1.8V @ 10A 60µA @ 650V 650V No Recovery Time > 500mA (Io) 0ns -55°C ~ 175°C 480pF @ 0V, 1MHz