- Part Status :
- Packaging :
- Mounting Type :
- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Operating Temperature - Junction :
- Applied Filters :
18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,639
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 1.1mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz | |||
|
VIEW |
3,193
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 527pF @ 1V, 1MHz | |||
|
|
VIEW |
868
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 30A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 40µA @ 600V | 600V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 527pF @ 1V, 1MHz | |||
|
|
VIEW |
714
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 650V 30A TO252 | Amp+™ | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | - | -55°C ~ 175°C | 527pF @ 1V, 1MHz | |||
|
VIEW |
1,760
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 30A TO220-2 | Amp+™ | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 10A | 40µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -50°C ~ 175°C | 527pF @ 1V, 1MHz | |||
|
VIEW |
3,994
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 30A TO247-2 | Amp+™ | Obsolete | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 135°C | 1790pF @ 1V, 1MHz | |||
|
|
VIEW |
3,456
In-stock
|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-268 | - | Active | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | Silicon Carbide Schottky | 30A (DC) | - | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
|
|
VIEW |
1,192
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 30A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 30A | 60µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1905pF @ 1V, 1MHz | |||
|
VIEW |
1,513
In-stock
|
Microsemi Corporation | UNRLS, FG, GEN2, SIC SBD, TO-220 | - | Active | - | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10kHz | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,832
In-stock
|
ON Semiconductor | 1200V 20A AUTO SIC SBD | Automotive, AEC-Q101 | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | - | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1220pF @ 1V, 100KHz | |||
|
|
VIEW |
1,643
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 1.2KV 30A TO247-2 | - | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | 1220pF @ 1V, 100KHz | |||
|
VIEW |
1,968
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 700V 30A TO220-3 | - | Active | - | Through Hole | TO-220-3 | TO-220-3 | Silicon Carbide Schottky | 30A (DC) | 1.5V @ 30A | - | 700V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
|
VIEW |
1,381
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 10A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 0V, 1MHz | |||
|
VIEW |
1,372
In-stock
|
ON Semiconductor | DIODE SCHOTTKY 650V 30A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.75V @ 30A | 200µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 1705pF @ 1V, 100kHz | |||
|
VIEW |
2,394
In-stock
|
Microsemi Corporation | DIODE SCHOTTKY 1.2KV 30A TO247 | - | Active | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 30A (DC) | 1.5V @ 30A | - | 1200V | No Recovery Time > 500mA (Io) | 0ns | - | - | |||
|
|
VIEW |
1,482
In-stock
|
Cree/Wolfspeed | DIODE SCHOTTKY 650V 10A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10A | 60µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 0V, 1MHz | |||
|
|
VIEW |
2,008
In-stock
|
Global Power Technologies Group | DIODE SCHOTTKY 600V 30A TO247-2 | Amp+™ | Active | Tube | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 30A (DC) | 1.65V @ 30A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1581pF @ 1V, 1MHZ | |||
|
|
VIEW |
1,124
In-stock
|
Infineon Technologies | DIODE SCHOTTKY 650V 30A TO247-3 | thinQ!™ | Active | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 30A (DC) | 1.7V @ 30A | 220µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 860pF @ 1V, 1MHz | |||
