- Supplier Device Package :
- Voltage - Forward (Vf) (Max) @ If :
- Capacitance @ Vr, F :
- Applied Filters :
76 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,106
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
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VIEW |
974
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
1,207
In-stock
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Comchip Technology | DIODE GEN PURP 200V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | |||
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VIEW |
3,764
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
VIEW |
1,505
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 200V | 200V | Small Signal =< 200mA (Io), Any Speed | 3µs | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
|
VIEW |
3,560
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A MPG06 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 600ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
2,256
In-stock
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Comchip Technology | DIODE GEN PURP 200V 3A DO201AA | - | Active | Tape & Box (TB) | Through Hole | DO-201AA, DO-27, Axial | DO-27 | Standard | 3A | 1V @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | - | |||
|
VIEW |
1,420
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A MPG06 | - | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 6.6pF @ 4V, 1MHz | |||
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VIEW |
630
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
1,353
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | 7pF @ 4V, 1MHz | |||
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|
VIEW |
1,476
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
1,237
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
3,771
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO204AL | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
2,982
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,556
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3.5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3.5A | 1.1V @ 3.5A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
691
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 1.3V @ 2A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
2,993
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1.5A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1.3V @ 1.5A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
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VIEW |
3,489
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1.5A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1.3V @ 1.5A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
VIEW |
662
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 2A DO204AC | - | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 2A | 950mV @ 2A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 25ns | -55°C ~ 150°C | - | |||
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VIEW |
1,154
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A MPG06 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 600ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
3,750
In-stock
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Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 1A MPG06 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.1V @ 1A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | 600ns | -55°C ~ 150°C | 10pF @ 4V, 1MHz | |||
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VIEW |
3,492
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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VIEW |
1,338
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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VIEW |
1,205
In-stock
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Vishay Semiconductor Diodes Division | DIODE GPP 1A 200V 150NS MPG06 | Automotive, AEC-Q101, Superectifier® | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 6.6pF @ 4V, 1MHz | |||
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VIEW |
1,584
In-stock
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Vishay Semiconductor Diodes Division | DIODE GPP 1A 200V 150NS MPG06 | Automotive, AEC-Q101, Superectifier® | Active | Tape & Box (TB) | Through Hole | MPG06, Axial | MPG06 | Standard | 1A | 1.3V @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 6.6pF @ 4V, 1MHz | |||
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VIEW |
2,082
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 150ns | -55°C ~ 150°C | 30pF @ 4V, 1MHz | |||
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|
VIEW |
3,709
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1.5A DO204AC | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | Standard | 1.5A | 1V @ 1.5A | 5µA @ 200V | 200V | Standard Recovery >500ns, > 200mA (Io) | - | -55°C ~ 150°C | 15pF @ 4V, 1MHz | |||
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|
VIEW |
1,890
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
3,583
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 600MA TS-1 | - | Active | Tape & Box (TB) | Through Hole | T-18, Axial | TS-1 | Standard | 600mA | 950mV @ 600mA | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 9pF @ 4V, 1MHz | |||
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|
VIEW |
914
In-stock
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Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 1A DO204AL | - | Active | Tape & Box (TB) | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | Standard | 1A | 950mV @ 1A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
