Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
GLOBAL STOCKS
SR810HA0G
RFQ
VIEW
RFQ
1,356
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 8A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Schottky 8A 920mV @ 8A 100µA @ 100V 100V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR815 A0G
RFQ
VIEW
RFQ
2,466
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 8A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Schottky 8A 1.02V @ 8A 100µA @ 150V 150V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SR809HA0G
RFQ
VIEW
RFQ
3,142
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 8A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Schottky 8A 920mV @ 8A 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SF64GHA0G
RFQ
VIEW
RFQ
2,106
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF63GHA0G
RFQ
VIEW
RFQ
1,056
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF46GHA0G
RFQ
VIEW
RFQ
2,529
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF45GHA0G
RFQ
VIEW
RFQ
2,734
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.3V @ 4A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,796
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.7V @ 6A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 65pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,760
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.3V @ 6A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,260
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
731
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,559
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,855
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1V @ 6A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF63G A0G
RFQ
VIEW
RFQ
2,415
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 6A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF62GHA0G
RFQ
VIEW
RFQ
1,047
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF61GHA0G
RFQ
VIEW
RFQ
1,570
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 6A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 6A 975mV @ 6A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF48GHA0G
RFQ
VIEW
RFQ
2,222
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SF47GHA0G
RFQ
VIEW
RFQ
2,783
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.7V @ 4A 5µA @ 500V 500V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 80pF @ 4V, 1MHz
SR805 A0G
RFQ
VIEW
RFQ
1,077
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Schottky 8A 700mV @ 8A 500µA @ 50V 50V Fast Recovery = 200mA (Io) - -55°C ~ 150°C -
SF44GHA0G
RFQ
VIEW
RFQ
974
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
SF43GHA0G
RFQ
VIEW
RFQ
3,139
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 4A DO201AD Automotive, AEC-Q101 Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1V @ 4A 5µA @ 150V 150V Fast Recovery = 200mA (Io) 35ns -55°C ~ 150°C 100pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
2,086
In-stock
Comchip Technology DIODE GEN PURP 1KV 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.7V @ 3A 5µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
877
In-stock
Comchip Technology DIODE GEN PURP 800V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.7V @ 3A 5µA @ 800V 800V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,252
In-stock
Comchip Technology DIODE GEN PURP 600V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.3V @ 3A 5µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
3,472
In-stock
Comchip Technology DIODE GEN PURP 400V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.3V @ 3A 5µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
2,112
In-stock
Comchip Technology DIODE GEN PURP 300V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
1,207
In-stock
Comchip Technology DIODE GEN PURP 200V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
958
In-stock
Comchip Technology DIODE GEN PURP 100V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
1,209
In-stock
Comchip Technology DIODE GEN PURP 50V 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1V @ 3A 5µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C -
Default Photo
RFQ
VIEW
RFQ
1,386
In-stock
Comchip Technology DIODE GEN PURP 1KV 3A DO201AA - Active Tape & Box (TB) Through Hole DO-201AA, DO-27, Axial DO-27 Standard 3A 1.7V @ 3A 5µA @ 1000V 1000V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C -