- Voltage - Forward (Vf) (Max) @ If :
-
- 1.05V @ 5A (1)
- 1.1V @ 3.5A (4)
- 1.1V @ 3A (6)
- 1.1V @ 9.4A (1)
- 1.25V @ 3A (2)
- 1.28V @ 4A (8)
- 1.2V @ 3A (12)
- 1.3V @ 3A (12)
- 1.3V @ 4A (2)
- 1.3V @ 5A (1)
- 1.3V @ 6A (2)
- 1.55V @ 5A (1)
- 1.6V @ 3A (2)
- 1.7V @ 3A (13)
- 1.7V @ 4A (2)
- 1.7V @ 6A (2)
- 1V @ 3A (15)
- 1V @ 4A (4)
- 2.1V @ 5A (1)
- 890mV @ 4A (4)
- 950mV @ 3A (5)
- 950mV @ 4A (8)
- 975mV @ 6A (4)
- Current - Reverse Leakage @ Vr :
-
- 10µA @ 1000V (3)
- 10µA @ 100V (2)
- 10µA @ 200V (3)
- 10µA @ 300V (2)
- 10µA @ 400V (7)
- 10µA @ 500V (1)
- 10µA @ 50V (2)
- 10µA @ 600V (6)
- 10µA @ 800V (2)
- 20µA @ 400V (3)
- 20µA @ 600V (3)
- 30µA @ 600V (1)
- 3µA @ 200V (2)
- 3µA @ 600V (3)
- 5µA @ 1000V (4)
- 5µA @ 100V (10)
- 5µA @ 1300V (1)
- 5µA @ 150V (6)
- 5µA @ 200V (15)
- 5µA @ 300V (3)
- 5µA @ 400V (7)
- 5µA @ 500V (3)
- 5µA @ 50V (9)
- 5µA @ 600V (9)
- 5µA @ 800V (5)
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
- Applied Filters :
112 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
|
VIEW |
2,415
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
VIEW |
2,647
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.25V @ 3A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 30ns | -40°C ~ 150°C | - | |||
|
|
VIEW |
1,380
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
3,943
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,201
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
2,959
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | |||
|
|
VIEW |
898
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | |||
|
|
VIEW |
3,378
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | |||
|
|
VIEW |
2,272
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | |||
|
|
VIEW |
1,505
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.1V @ 3A | 5µA @ 200V | 200V | Small Signal =< 200mA (Io), Any Speed | 3µs | -55°C ~ 150°C | 40pF @ 4V, 1MHz | |||
|
|
VIEW |
2,158
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.2V @ 3A | 5µA @ 400V | 800V | Standard Recovery >500ns, > 200mA (Io) | - | -50°C ~ 150°C | 30pF @ 4V, 1MHz | |||
|
|
VIEW |
1,243
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
|
|
VIEW |
1,766
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.6V @ 3A | 20µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 30ns | -40°C ~ 150°C | - | |||
|
|
VIEW |
1,499
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 890mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -65°C ~ 175°C | - | |||
|
|
VIEW |
2,411
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
|
|
VIEW |
2,597
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
|
|
VIEW |
3,364
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1V @ 3A | 10µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 150°C | 45pF @ 4V, 1MHz | |||
|
|
VIEW |
2,105
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
|
|
VIEW |
817
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 75ns | -65°C ~ 175°C | - | |||
|
|
VIEW |
2,513
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
3,749
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | |||
|
|
VIEW |
3,103
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 36pF @ 4V, 1MHz | |||
|
|
VIEW |
3,112
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 500V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 36pF @ 4V, 1MHz | |||
|
|
VIEW |
630
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
648
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 150V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
3,037
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
3,796
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 50V 4A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 950mV @ 4A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 30ns | -55°C ~ 150°C | 20pF @ 4V, 1MHz | |||
|
|
VIEW |
813
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 2.1V @ 5A | 30µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 150°C | - | |||
|
|
VIEW |
1,804
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 5A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 5A | 1.55V @ 5A | 10µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 20ns | -55°C ~ 175°C | - | |||
|
|
VIEW |
3,699
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.6V @ 3A | 20µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 30ns | -40°C ~ 150°C | - | |||
