- Voltage - Forward (Vf) (Max) @ If :
-
- 1.05V @ 5A (2)
- 1.1V @ 3.5A (4)
- 1.1V @ 3A (12)
- 1.1V @ 9.4A (1)
- 1.25V @ 3A (2)
- 1.28V @ 4A (12)
- 1.2V @ 1A (1)
- 1.2V @ 3A (13)
- 1.3V @ 1A (1)
- 1.3V @ 3A (20)
- 1.3V @ 4A (4)
- 1.3V @ 5A (1)
- 1.3V @ 6A (4)
- 1.55V @ 5A (2)
- 1.6V @ 2.5A (1)
- 1.6V @ 3A (2)
- 1.7V @ 3A (15)
- 1.7V @ 4A (4)
- 1.7V @ 6A (4)
- 1V @ 3A (20)
- 1V @ 4A (8)
- 2.1V @ 5A (2)
- 890mV @ 4A (6)
- 950mV @ 3A (9)
- 950mV @ 4A (8)
- 975mV @ 6A (8)
- Current - Reverse Leakage @ Vr :
-
- 10µA @ 1000V (3)
- 10µA @ 100V (2)
- 10µA @ 200V (4)
- 10µA @ 300V (2)
- 10µA @ 400V (10)
- 10µA @ 500V (1)
- 10µA @ 50V (2)
- 10µA @ 600V (8)
- 10µA @ 800V (2)
- 20µA @ 400V (3)
- 20µA @ 600V (3)
- 30µA @ 600V (2)
- 3µA @ 200V (2)
- 3µA @ 600V (3)
- 500nA @ 600V (1)
- 5µA @ 1000V (7)
- 5µA @ 100V (16)
- 5µA @ 1300V (1)
- 5µA @ 1500V (1)
- 5µA @ 150V (9)
- 5µA @ 200V (23)
- 5µA @ 300V (6)
- 5µA @ 400V (12)
- 5µA @ 500V (6)
- 5µA @ 50V (13)
- 5µA @ 600V (16)
- 5µA @ 800V (8)
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
-
- 100pF @ 4V, 1MHz (16)
- 15pF @ 4V, 1MHz (1)
- 20pF @ 4V, 1MHz (12)
- 25pF @ 4V, 1MHz (15)
- 28pF @ 4V, 1MHz (1)
- 30pF @ 0V, 1MHz (1)
- 30pF @ 4V, 1MHz (18)
- 35pF @ 4V, 1MHz (3)
- 36pF @ 4V, 1MHz (4)
- 40pF @ 4V, 1MHz (6)
- 45pF @ 4V, 1MHz (5)
- 50pF @ 4V, 1MHz (8)
- 60pF @ 4V, 1MHz (13)
- 65pF @ 4V, 1MHz (12)
- 80pF @ 4V, 1MHz (16)
- Applied Filters :
166 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||
VIEW |
2,556
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.28V @ 4A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | -55°C ~ 175°C | 65pF @ 4V, 1MHz | ||||
VIEW |
2,129
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 1A DO201AD | Automotive, AEC-Q101, Superectifier® | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 1A | 1.3V @ 1A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 175°C | 15pF @ 4V, 1MHz | ||||
VIEW |
2,106
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
1,056
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
2,529
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.3V @ 4A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,734
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.3V @ 4A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,415
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 6A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
1,047
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
1,570
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 6A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 6A | 975mV @ 6A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
2,222
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,783
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1.7V @ 4A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
974
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
3,139
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 4A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A | 1V @ 4A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 100pF @ 4V, 1MHz | ||||
VIEW |
2,647
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.25V @ 3A | 20µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 30ns | -40°C ~ 150°C | - | ||||
VIEW |
2,248
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,433
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
2,997
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 400V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 400V | 400V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,835
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,764
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 200V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 200V | 200V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,666
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
670
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,296
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 50V 3A DO201AD | Automotive, AEC-Q101 | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 50V | 50V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
3,641
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1KV 3A DO201AD | SUPERECTIFIER® | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 1000V | 1000V | Fast Recovery = 200mA (Io) | 500ns | -65°C ~ 175°C | - | ||||
VIEW |
2,627
In-stock
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | SUPERECTIFIER® | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 500ns | -65°C ~ 175°C | - | ||||
VIEW |
1,380
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 500V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 5µA @ 500V | 500V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
3,943
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 300V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.3V @ 3A | 5µA @ 300V | 300V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 60pF @ 4V, 1MHz | ||||
VIEW |
1,201
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 150V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 150V | 150V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
2,959
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 100V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 950mV @ 3A | 5µA @ 100V | 100V | Fast Recovery = 200mA (Io) | 35ns | -55°C ~ 150°C | 80pF @ 4V, 1MHz | ||||
VIEW |
898
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 800V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz | ||||
VIEW |
3,378
In-stock
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 3A DO201AD | - | Active | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 3A | 1.7V @ 3A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | -55°C ~ 150°C | 35pF @ 4V, 1MHz |