Supplier Device Package :
Current - Average Rectified (Io) :
Voltage - DC Reverse (Vr) (Max) :
Reverse Recovery Time (trr) :
Operating Temperature - Junction :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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RFQ
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RFQ
1,796
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.7V @ 6A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 65pF @ 4V, 1MHz
MUR440 A0G
RFQ
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RFQ
2,241
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L60 A0G
RFQ
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RFQ
820
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40 A0G
RFQ
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RFQ
955
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L20 A0G
RFQ
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RFQ
2,838
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
SR009 A0G
RFQ
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RFQ
3,006
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 500MA DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 850mV @ 500mA 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 65pF @ 4V, 1MHz
MUR420 A0G
RFQ
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RFQ
2,489
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR460 A0G
RFQ
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RFQ
826
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
SR010 A0G
RFQ
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RFQ
2,860
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 500MA DO204 - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 850mV @ 500mA 100µA @ 100V 100V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 65pF @ 4V, 1MHz