Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Mounting Type Package / Case Supplier Device Package Diode Type Current - Average Rectified (Io) Voltage - Forward (Vf) (Max) @ If Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Speed Reverse Recovery Time (trr) Operating Temperature - Junction Capacitance @ Vr, F
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HERA805G C0G
RFQ
VIEW
RFQ
3,526
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1.3V @ 8A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 65pF @ 4V, 1MHz
HERA804G C0G
RFQ
VIEW
RFQ
3,516
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1V @ 8A 10µA @ 300V 300V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 65pF @ 4V, 1MHz
HERA803G C0G
RFQ
VIEW
RFQ
765
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1V @ 8A 10µA @ 200V 200V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 65pF @ 4V, 1MHz
HERA802G C0G
RFQ
VIEW
RFQ
3,270
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1V @ 8A 10µA @ 100V 100V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 65pF @ 4V, 1MHz
HERA801G C0G
RFQ
VIEW
RFQ
2,064
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 8A TO220AC - Active Tube Through Hole TO-220-2 TO-220AC Standard 8A 1V @ 8A 10µA @ 50V 50V Fast Recovery = 200mA (Io) 50ns -55°C ~ 150°C 65pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
3,182
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 - Active Bulk Through Hole R6, Axial R-6 Standard 6A 1.7V @ 6A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 65pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
1,796
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 - Active Tape & Box (TB) Through Hole R6, Axial R-6 Standard 6A 1.7V @ 6A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 65pF @ 4V, 1MHz
Default Photo
RFQ
VIEW
RFQ
790
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 6A R-6 - Active Tape & Reel (TR) Through Hole R6, Axial R-6 Standard 6A 1.7V @ 6A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 75ns -55°C ~ 150°C 65pF @ 4V, 1MHz
MUR4L60 B0G
RFQ
VIEW
RFQ
1,582
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40 B0G
RFQ
VIEW
RFQ
2,874
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L20 B0G
RFQ
VIEW
RFQ
3,780
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440 B0G
RFQ
VIEW
RFQ
3,284
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR420 B0G
RFQ
VIEW
RFQ
624
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Bulk Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440 A0G
RFQ
VIEW
RFQ
2,241
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L60 R0G
RFQ
VIEW
RFQ
3,233
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40 R0G
RFQ
VIEW
RFQ
3,479
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L20 R0G
RFQ
VIEW
RFQ
1,853
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440 R0G
RFQ
VIEW
RFQ
2,170
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR420 R0G
RFQ
VIEW
RFQ
3,398
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Tape & Reel (TR) Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L60 A0G
RFQ
VIEW
RFQ
820
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L40 A0G
RFQ
VIEW
RFQ
955
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 1.28V @ 4A 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR4L20 A0G
RFQ
VIEW
RFQ
2,838
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Tape & Box (TB) Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR460S V6G
RFQ
VIEW
RFQ
3,881
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO214AB - Active - Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 4A - 10µA @ 600V 600V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR440S V6G
RFQ
VIEW
RFQ
3,677
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO214AB - Active - Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 4A - 10µA @ 400V 400V Fast Recovery = 200mA (Io) 50ns -55°C ~ 175°C 65pF @ 4V, 1MHz
MUR420S V6G
RFQ
VIEW
RFQ
3,331
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO214AB - Active - Surface Mount DO-214AB, SMC DO-214AB (SMC) Standard 4A - 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz
SR009 B0G
RFQ
VIEW
RFQ
636
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 500MA DO204AL - Active Bulk Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 850mV @ 500mA 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 65pF @ 4V, 1MHz
SR009 A0G
RFQ
VIEW
RFQ
3,006
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 500MA DO204AL - Active Tape & Box (TB) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 850mV @ 500mA 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 65pF @ 4V, 1MHz
SR009 R0G
RFQ
VIEW
RFQ
3,485
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 500MA DO204AL - Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 850mV @ 500mA 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 65pF @ 4V, 1MHz
SR009 R1G
RFQ
VIEW
RFQ
2,545
In-stock
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 500MA DO204AL - Active Tape & Reel (TR) Through Hole DO-204AL, DO-41, Axial DO-204AL (DO-41) Schottky 500mA 850mV @ 500mA 100µA @ 90V 90V Fast Recovery = 200mA (Io) - -55°C ~ 150°C 65pF @ 4V, 1MHz
MUR420 A0G
RFQ
VIEW
RFQ
3,655
In-stock
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 4A DO201AD - Active Cut Tape (CT) Through Hole DO-201AD, Axial DO-201AD Standard 4A 890mV @ 4A 5µA @ 200V 200V Fast Recovery = 200mA (Io) 25ns -55°C ~ 175°C 65pF @ 4V, 1MHz