- Package / Case :
- Supplier Device Package :
- Current - Average Rectified (Io) :
- Voltage - Forward (Vf) (Max) @ If :
- Current - Reverse Leakage @ Vr :
- Operating Temperature - Junction :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||
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VIEW |
2,880
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.6V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 884pF @ 1V, 1MHz | |||
|
VIEW |
3,563
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
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VIEW |
660
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
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VIEW |
794
In-stock
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 8A (DC) | 1.6V @ 2.5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 237pF @ 1V, 1MHz | |||
|
VIEW |
2,525
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
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VIEW |
1,026
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.74V @ 750mA | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 66pF @ 1V, 1MHz | |||
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VIEW |
874
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 2A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 138pF @ 1V, 1MHz | |||
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VIEW |
2,833
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
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|
VIEW |
1,728
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | - | Active | Bulk | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 20A | 2V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 968pF @ 1V, 1MHz | |||
