- Supplier Device Package :
- Current - Average Rectified (Io) :
- Operating Temperature - Junction :
- Capacitance @ Vr, F :
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18 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Mounting Type | Package / Case | Supplier Device Package | Diode Type | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Speed | Reverse Recovery Time (trr) | Operating Temperature - Junction | Capacitance @ Vr, F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
717
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 8KV 50MA AXIAL | - | Active | Tube | Through Hole | Axial | - | Silicon Carbide Schottky | 50mA (DC) | 4.6V @ 50mA | 3.8µA @ 8000V | 8000V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 25pF @ 1V, 1MHz | |||
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VIEW |
2,880
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.6V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 884pF @ 1V, 1MHz | |||
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VIEW |
3,357
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 9.4A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 9.4A (DC) | 1.34V @ 10A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 1107pF @ 1V, 1MHz | |||
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VIEW |
3,699
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 1A TO276 | - | Active | Tube | Through Hole | TO-276AA | TO-276 | Silicon Carbide Schottky | 1A | 1.5V @ 1A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 76pF @ 1V, 1MHz | |||
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VIEW |
3,563
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | |||
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VIEW |
660
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 5A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 5A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 260pF @ 1V, 1MHz | |||
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VIEW |
794
In-stock
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GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 8A (DC) | 1.6V @ 2.5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 237pF @ 1V, 1MHz | |||
|
VIEW |
2,525
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 50A TO247AC | - | Active | Tube | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 50A | 1.8V @ 50A | 1mA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 2940pF @ 1V, 1MHz | |||
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VIEW |
1,026
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.74V @ 750mA | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 66pF @ 1V, 1MHz | |||
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VIEW |
2,209
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 2.5A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 2.5A | 1.3V @ 2.5A | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 274pF @ 1V, 1MHz | |||
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VIEW |
3,949
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 650V 750MA TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 750mA | 1.39V @ 750mA | 5µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 76pF @ 1V, 1MHz | |||
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VIEW |
3,528
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 600V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
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VIEW |
2,785
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 100V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 100V | 100V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
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VIEW |
874
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 2A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 2A | 1.8V @ 2A | 50µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 138pF @ 1V, 1MHz | |||
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VIEW |
3,204
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 300V 4A | - | Active | Bulk | Through Hole | TO-206AB, TO-46-3 Metal Can | TO-46 | Silicon Carbide Schottky | 4A (DC) | 1.6V @ 1A | 5µA @ 300V | 300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 225°C | 76pF @ 1V, 1MHz | |||
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VIEW |
2,833
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 1A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 1A | 1.8V @ 1A | 2µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 69pF @ 1V, 1MHz | |||
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VIEW |
1,728
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 20A TO247AC | - | Active | Bulk | Through Hole | TO-247-2 | TO-247AC | Silicon Carbide Schottky | 20A | 2V @ 20A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 968pF @ 1V, 1MHz | |||
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VIEW |
964
In-stock
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GeneSiC Semiconductor | DIODE SCHOTTKY 3.3KV 300MA TO220 | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220FP | Silicon Carbide Schottky | 300mA | 1.7V @ 300mA | 5µA @ 3300V | 3300V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 42pF @ 1V, 1MHz | |||
