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STW19NM65N

Discrete Semiconductor Products TO-247-3

Manufacturer No:: STW19NM65N

Manufacturer:: STMicroelectronics

Product Category:: Transistors - FETs, MOSFETs - Single

Description:: MOSFET N-CH 650V 15.5A TO-247

RoHs Status:: Lead Free / RoHS Compliant

Datasheet:: STW19NM65N Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Single	Manufacturer :	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C :	15.5A (Tc)	Drain to Source Voltage (Vdss) :	650V
Drive Voltage (Max Rds On, Min Rds On) :	10V	FET Feature :	-
FET Type :	N-Channel	Gate Charge (Qg) (Max) @ Vgs :	55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :	1900pF @ 50V	Mounting Type :	Through Hole
Operating Temperature :	150°C (TJ)	Package / Case :	TO-247-3
Packaging :	Tube	Part Status :	Obsolete
Power Dissipation (Max) :	150W (Tc)	Rds On (Max) @ Id, Vgs :	270 mOhm @ 7.75A, 10V
Series :	MDmesh™ II	Supplier Device Package :	TO-247-3
Technology :	MOSFET (Metal Oxide)	Vgs (Max) :	±25V
Vgs(th) (Max) @ Id :	4V @ 250µA

STW19NM65N has the following characteristics

STW19NM65Nis produced bySTMicroelectronics, belongs to Transistors - FETs, MOSFETs - Single, and its best working temperature is 150°C (TJ), the size is TO-247-3, and Tube is its most common packaging method, which belongs to the MDmesh™ II series, using TO-247-3.

STW19NM65N Product Detail:

STW19NM65N is a Transistors - FETs, MOSFETs - Single, Buffer Amps, Designed and produced by STMicroelectronics. The STW19NM65N produced by STMicroelectronics can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The STW19NM65N of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the STW19NM65N Datasheet （PDF)， STW19NM65N price, STW19NM65N pinout, STW19NM65N manual, and STW19NM65N replacement Solution.

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