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STP5NK80Z

Discrete Semiconductor Products TO-220-3

Manufacturer No:: STP5NK80Z

Manufacturer:: STMicroelectronics

Product Category:: Transistors - FETs, MOSFETs - Single

Description:: MOSFET N-CH 800V 4.3A TO-220

RoHs Status:: Lead Free / RoHS Compliant

Datasheet:: STP5NK80Z Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Single	Manufacturer :	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C :	4.3A (Tc)	Drain to Source Voltage (Vdss) :	800V
Drive Voltage (Max Rds On, Min Rds On) :	10V	FET Feature :	-
FET Type :	N-Channel	Gate Charge (Qg) (Max) @ Vgs :	45.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :	910pF @ 25V	Mounting Type :	Through Hole
Operating Temperature :	-55°C ~ 150°C (TJ)	Package / Case :	TO-220-3
Packaging :	Tube	Part Status :	Active
Power Dissipation (Max) :	110W (Tc)	Rds On (Max) @ Id, Vgs :	2.4 Ohm @ 2.15A, 10V
Series :	PowerMESH™	Supplier Device Package :	TO-220AB
Technology :	MOSFET (Metal Oxide)	Vgs (Max) :	±30V
Vgs(th) (Max) @ Id :	4.5V @ 100µA

STP5NK80Z has the following characteristics

STP5NK80Zis produced bySTMicroelectronics, belongs to Transistors - FETs, MOSFETs - Single, and its best working temperature is -55°C ~ 150°C (TJ), the size is TO-220-3, and Tube is its most common packaging method, which belongs to the PowerMESH™ series, using TO-220AB.

STP5NK80Z Product Detail:

STP5NK80Z is a Transistors - FETs, MOSFETs - Single, Buffer Amps, Designed and produced by STMicroelectronics. The STP5NK80Z produced by STMicroelectronics can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The STP5NK80Z of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the STP5NK80Z Datasheet （PDF)， STP5NK80Z price, STP5NK80Z pinout, STP5NK80Z manual, and STP5NK80Z replacement Solution.

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