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NTMD4820NR2G

Discrete Semiconductor Products 8-SOIC (0.154", 3.90mm Width)

Manufacturer No:: NTMD4820NR2G

Manufacturer:: ON Semiconductor

Product Category:: Transistors - FETs, MOSFETs - Arrays

Description:: MOSFET 2N-CH 30V 4.9A 8SOIC

RoHs Status:: Lead Free / RoHS Compliant

Datasheet:: NTMD4820NR2G Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Arrays	Manufacturer :	ON Semiconductor
Current - Continuous Drain (Id) @ 25°C :	4.9A	Drain to Source Voltage (Vdss) :	30V
FET Feature :	Logic Level Gate	FET Type :	2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs :	7.7nC @ 4.5V	Input Capacitance (Ciss) (Max) @ Vds :	940pF @ 15V
Mounting Type :	Surface Mount	Operating Temperature :	-55°C ~ 150°C (TJ)
Package / Case :	8-SOIC (0.154", 3.90mm Width)	Packaging :	Tape & Reel (TR)
Part Status :	Active	Power - Max :	750mW
Rds On (Max) @ Id, Vgs :	20 mOhm @ 7.5A, 10V	Series :	-
Supplier Device Package :	8-SOIC	Vgs(th) (Max) @ Id :	3V @ 250µA

NTMD4820NR2G has the following characteristics

NTMD4820NR2Gis produced byON Semiconductor, belongs to Transistors - FETs, MOSFETs - Arrays, and its best working temperature is -55°C ~ 150°C (TJ), the size is 8-SOIC (0.154", 3.90mm Width), and Tape & Reel (TR) is its most common packaging method, which belongs to the - series, using 8-SOIC.

NTMD4820NR2G Product Detail:

NTMD4820NR2G is a Transistors - FETs, MOSFETs - Arrays, Buffer Amps, Designed and produced by ON Semiconductor. The NTMD4820NR2G produced by ON Semiconductor can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The NTMD4820NR2G of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the NTMD4820NR2G Datasheet （PDF)， NTMD4820NR2G price, NTMD4820NR2G pinout, NTMD4820NR2G manual, and NTMD4820NR2G replacement Solution.

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