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IXTM35N30

Discrete Semiconductor Products TO-204AE

Manufacturer No:: IXTM35N30

Manufacturer:: IXYS

Product Category:: Transistors - FETs, MOSFETs - Single

Description:: POWER MOSFET TO-3

RoHs Status:: Lead Free / RoHS Compliant

Datasheet:: PDF
Data sheet

Product Category :	Transistors - FETs, MOSFETs - Single	Manufacturer :	IXYS
Current - Continuous Drain (Id) @ 25°C :	35A (Tc)	Drain to Source Voltage (Vdss) :	300V
Drive Voltage (Max Rds On, Min Rds On) :	10V	FET Feature :	-
FET Type :	N-Channel	Gate Charge (Qg) (Max) @ Vgs :	220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :	4600pF @ 25V	Mounting Type :	Through Hole
Operating Temperature :	-55°C ~ 150°C (TJ)	Package / Case :	TO-204AE
Packaging :	-	Part Status :	Last Time Buy
Power Dissipation (Max) :	300W (Tc)	Rds On (Max) @ Id, Vgs :	100 mOhm @ 17.5A, 10V
Series :	GigaMOS™	Supplier Device Package :	TO-204AE
Technology :	MOSFET (Metal Oxide)	Vgs (Max) :	±20V
Vgs(th) (Max) @ Id :	4V @ 250µA

IXTM35N30 has the following characteristics

IXTM35N30is produced byIXYS, belongs to Transistors - FETs, MOSFETs - Single, and its best working temperature is -55°C ~ 150°C (TJ), the size is TO-204AE, and - is its most common packaging method, which belongs to the GigaMOS™ series, using TO-204AE.

IXTM35N30 Product Detail:

IXTM35N30 is a Transistors - FETs, MOSFETs - Single, Buffer Amps, Designed and produced by IXYS. The IXTM35N30 produced by IXYS can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The IXTM35N30 of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the IXTM35N30 Datasheet （PDF)， IXTM35N30 price, IXTM35N30 pinout, IXTM35N30 manual, and IXTM35N30 replacement Solution.

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