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IPC26N12NX1SA1

Discrete Semiconductor Products Die

Manufacturer No:: IPC26N12NX1SA1

Manufacturer:: Infineon Technologies

Product Category:: Transistors - FETs, MOSFETs - Single

Description:: MOSFET N-CH 120V 1A SAWN ON FOIL

RoHs Status:: Lead Free / RoHS Compliant

Datasheet:: IPC26N12NX1SA1 Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Single	Manufacturer :	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C :	1A (Tj)	Drain to Source Voltage (Vdss) :	120V
Drive Voltage (Max Rds On, Min Rds On) :	10V	FET Feature :	-
FET Type :	N-Channel	Gate Charge (Qg) (Max) @ Vgs :	-
Input Capacitance (Ciss) (Max) @ Vds :	-	Mounting Type :	Surface Mount
Operating Temperature :	-	Package / Case :	Die
Packaging :	-	Part Status :	Active
Power Dissipation (Max) :	-	Rds On (Max) @ Id, Vgs :	100 mOhm @ 2A, 10V
Series :	OptiMOS™	Supplier Device Package :	Sawn on foil
Technology :	MOSFET (Metal Oxide)	Vgs (Max) :	-
Vgs(th) (Max) @ Id :	4V @ 244µA

IPC26N12NX1SA1 has the following characteristics

IPC26N12NX1SA1is produced byInfineon Technologies, belongs to Transistors - FETs, MOSFETs - Single, and its best working temperature is -, the size is Die, and - is its most common packaging method, which belongs to the OptiMOS™ series, using Sawn on foil.

IPC26N12NX1SA1 Product Detail:

IPC26N12NX1SA1 is a Transistors - FETs, MOSFETs - Single, Buffer Amps, Designed and produced by Infineon Technologies. The IPC26N12NX1SA1 produced by Infineon Technologies can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The IPC26N12NX1SA1 of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the IPC26N12NX1SA1 Datasheet （PDF)， IPC26N12NX1SA1 price, IPC26N12NX1SA1 pinout, IPC26N12NX1SA1 manual, and IPC26N12NX1SA1 replacement Solution.

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