Favorite

EPC2110ENGRT

Discrete Semiconductor Products Die

Manufacturer No:: EPC2110ENGRT

Manufacturer:: EPC

Product Category:: Transistors - FETs, MOSFETs - Arrays

Description:: TRANS GAN 2N-CH 120V BUMPED DIE

RoHs Status:: Lead Free / RoHS Compliant

Datasheet:: EPC2110ENGRT Datasheet(PDF)

Product Category :	Transistors - FETs, MOSFETs - Arrays	Manufacturer :	EPC
Current - Continuous Drain (Id) @ 25°C :	3.4A	Drain to Source Voltage (Vdss) :	120V
FET Feature :	GaNFET (Gallium Nitride)	FET Type :	2 N-Channel (Dual) Common Source
Gate Charge (Qg) (Max) @ Vgs :	0.8nC @ 5V	Input Capacitance (Ciss) (Max) @ Vds :	80pF @ 60V
Mounting Type :	Surface Mount	Operating Temperature :	-40°C ~ 150°C (TJ)
Package / Case :	Die	Packaging :	Cut Tape (CT)
Part Status :	Active	Power - Max :	-
Rds On (Max) @ Id, Vgs :	60 mOhm @ 4A, 5V	Series :	eGaN®
Supplier Device Package :	Die	Vgs(th) (Max) @ Id :	2.5V @ 700µA

EPC2110ENGRT has the following characteristics

EPC2110ENGRTis produced byEPC, belongs to Transistors - FETs, MOSFETs - Arrays, and its best working temperature is -40°C ~ 150°C (TJ), the size is Die, and Cut Tape (CT) is its most common packaging method, which belongs to the eGaN® series, using Die.

EPC2110ENGRT Product Detail:

EPC2110ENGRT is a Transistors - FETs, MOSFETs - Arrays, Buffer Amps, Designed and produced by EPC. The EPC2110ENGRT produced by EPC can be purchased on the website of Dyethin. Here you can find various types of electronic parts from leading manufacturers worldwide. The EPC2110ENGRT of Dyethin has undergone strict quality control and meets all the requirements. The inventory status marked on Dyethin is for reference only. If you haven’t found the part you are looking for, you can contact us for more information, such as the inventory quantity of the EPC2110ENGRT Datasheet （PDF)， EPC2110ENGRT price, EPC2110ENGRT pinout, EPC2110ENGRT manual, and EPC2110ENGRT replacement Solution.