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  4. Optoisolators - Transistor, Photovoltaic Output
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23 results
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Output Type Number of Channels Supplier Device Package Current - Output / Channel Voltage - Isolation Rise / Fall Time (Typ) Voltage - Output (Max) Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max) Current Transfer Ratio (Min) Turn On / Turn Off Time (Typ) Vce Saturation (Max)
GLOBAL STOCKS
4N28
4N28
RFQ
VIEW
RFQ
3,885
In-stock
 Lite-On Inc. OPTOISO .5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 8-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 500Vrms 3µs, 3µs 30V 1.2V 80mA 10% @ 10mA - 500mV
Default Photo
4N27
RFQ
VIEW
RFQ
3,784
In-stock
 Lite-On Inc. OPTOISO 1.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 1500Vrms 3µs, 3µs 30V 1.2V 80mA 10% @ 10mA - 500mV
4N28M
4N28M
RFQ
VIEW
RFQ
3,113
In-stock
 Lite-On Inc. OPTOISO .5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.400", 10.16mm) Transistor with Base 1 6-DIP 100mA 500Vrms 3µs, 3µs 30V 1.2V 80mA 10% @ 10mA - 500mV
4N27M
4N27M
RFQ
VIEW
RFQ
1,069
In-stock
 Lite-On Inc. OPTOISO 1.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.400", 10.16mm) Transistor with Base 1 6-DIP 100mA 1500Vrms 3µs, 3µs 30V 1.2V 80mA 10% @ 10mA - 500mV
4N26M
4N26M
RFQ
VIEW
RFQ
2,067
In-stock
 Lite-On Inc. OPTOISO 1.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.400", 10.16mm) Transistor with Base 1 6-DIP 100mA 1500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
4N25M
4N25M
RFQ
VIEW
RFQ
1,379
In-stock
 Lite-On Inc. OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.400", 10.16mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
4N38TVM
4N38TVM
RFQ
VIEW
RFQ
2,327
In-stock
 ON Semiconductor OPTOISO 4.17KV TRANS W/BASE 6DIP - Active Tube DC -40°C ~ 100°C Through Hole 6-DIP (0.400", 10.16mm) Transistor with Base 1 6-DIP 100mA 4170Vrms - 80V 1.15V 80mA 20% @ 10mA 5µs, 5µs 1V
MOC8204M
MOC8204M
RFQ
VIEW
RFQ
2,877
In-stock
 ON Semiconductor OPTOISO 4.17KV TRANS W/BASE 6DIP - Active Tube DC -40°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 4170Vrms - 400V 1.15V 80mA 20% @ 10mA 5µs, 5µs 400mV
4N26
4N26
RFQ
VIEW
RFQ
3,820
In-stock
 Lite-On Inc. OPTOISO 1.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 1500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
4N26(SHORT,F)
4N26(SHORT,F)
RFQ
VIEW
RFQ
796
In-stock
 Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 2µs, 200µs 30V 1.15V 80mA 20% @ 10mA - 500mV
4N38VM
4N38VM
RFQ
VIEW
RFQ
2,708
In-stock
 ON Semiconductor OPTOISO 4.17KV TRANS W/BASE 6DIP - Active Tube DC -40°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 4170Vrms - 80V 1.15V 80mA 20% @ 10mA 5µs, 5µs 1V
4N25A(SHORT,F)
4N25A(SHORT,F)
RFQ
VIEW
RFQ
3,782
In-stock
 Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 2µs, 200µs 30V 1.15V 80mA 20% @ 10mA - 500mV
H11D3M
H11D3M
RFQ
VIEW
RFQ
2,651
In-stock
 ON Semiconductor OPTOISO 4.17KV TRANS W/BASE 6DIP - Active Tube DC -40°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 4170Vrms - 200V 1.15V 80mA 20% @ 10mA 5µs, 5µs 400mV
4N25(SHORT,F)
4N25(SHORT,F)
RFQ
VIEW
RFQ
2,992
In-stock
 Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 2µs, 200µs 30V 1.15V 80mA 20% @ 10mA - 500mV
4N25-W00E
4N25-W00E
RFQ
VIEW
RFQ
2,984
In-stock
 Broadcom Limited OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.400", 10.16mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
4N25-060E
4N25-060E
RFQ
VIEW
RFQ
2,688
In-stock
 Broadcom Limited OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
4N38(SHORT,F)
4N38(SHORT,F)
RFQ
VIEW
RFQ
1,390
In-stock
 Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms - 80V 1.15V 80mA 10% @ 10mA 3µs, 3µs 1V
4N25-000E
4N25-000E
RFQ
VIEW
RFQ
3,023
In-stock
 Broadcom Limited OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
4N25-W60E
4N25-W60E
RFQ
VIEW
RFQ
3,654
In-stock
 Broadcom Limited OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.400", 10.16mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
H11D1VM
H11D1VM
RFQ
VIEW
RFQ
1,624
In-stock
 ON Semiconductor OPTOISO 4.17KV TRANS W/BASE 6DIP - Active Tube DC -40°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 4170Vrms - 300V 1.15V 80mA 20% @ 10mA 5µs, 5µs 400mV
H11D1M
H11D1M
RFQ
VIEW
RFQ
3,419
In-stock
 ON Semiconductor OPTOISO 4.17KV TRANS W/BASE 6DIP - Active Tube DC -40°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 4170Vrms - 300V 1.15V 80mA 20% @ 10mA 5µs, 5µs 400mV
4N38M
4N38M
RFQ
VIEW
RFQ
1,053
In-stock
 ON Semiconductor OPTOISO 4.17KV TRANS W/BASE 6DIP - Active Tube DC -40°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 4170Vrms - 80V 1.15V 80mA 20% @ 10mA 5µs, 5µs 1V
4N25
4N25
RFQ
VIEW
RFQ
1,295
In-stock
 Lite-On Inc. OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 3µs, 3µs 30V 1.2V 80mA 20% @ 10mA - 500mV
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