Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Input Type Operating Temperature Mounting Type Package / Case Output Type Number of Channels Supplier Device Package Current - Output / Channel Voltage - Isolation Rise / Fall Time (Typ) Voltage - Output (Max) Voltage - Forward (Vf) (Typ) Current - DC Forward (If) (Max) Current Transfer Ratio (Min) Current Transfer Ratio (Max) Turn On / Turn Off Time (Typ) Vce Saturation (Max)
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TLP731(D4-GR,F)
RFQ
VIEW
RFQ
3,802
In-stock
Toshiba Semiconductor and Storage OPTOISO 4KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 50mA 4000Vrms 2µs, 3µs 55V 1.15V 60mA 50% @ 5mA 600% @ 5mA 3µs, 3µs 400mV
TLP331(F)
RFQ
VIEW
RFQ
2,791
In-stock
Toshiba Semiconductor and Storage OPTOISO 5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 50mA 5000Vrms 8µs, 8µs 55V 1.15V 50mA 100% @ 1mA 1200% @ 1mA 10µs, 8µs 400mV
TLP331(BV,F)
RFQ
VIEW
RFQ
2,960
In-stock
Toshiba Semiconductor and Storage OPTOISO 5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 50mA 5000Vrms 8µs, 8µs 55V 1.15V 50mA 200% @ 1mA 1200% @ 1mA 10µs, 8µs 400mV
4N36(SHORT,F)
RFQ
VIEW
RFQ
3,984
In-stock
Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms - 30V 1.15V 60mA 40% @ 10mA - 3µs, 3µs 300mV
4N26(SHORT,F)
RFQ
VIEW
RFQ
796
In-stock
Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 2µs, 200µs 30V 1.15V 80mA 20% @ 10mA - - 500mV
4N25A(SHORT,F)
RFQ
VIEW
RFQ
3,782
In-stock
Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 2µs, 200µs 30V 1.15V 80mA 20% @ 10mA - - 500mV
TLP631(F)
RFQ
VIEW
RFQ
2,723
In-stock
Toshiba Semiconductor and Storage OPTOISO 5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 50mA 5000Vrms 2µs, 3µs 55V 1.15V 60mA 50% @ 5mA 600% @ 5mA 3µs, 3µs 400mV
4N35(SHORT,F)
RFQ
VIEW
RFQ
939
In-stock
Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms - 30V 1.15V 60mA 40% @ 10mA - 3µs, 3µs 300mV
TLP631(GB,F)
RFQ
VIEW
RFQ
2,185
In-stock
Toshiba Semiconductor and Storage OPTOISO 5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 50mA 5000Vrms 2µs, 3µs 55V 1.15V 60mA 100% @ 5mA 600% @ 5mA 3µs, 3µs 400mV
4N25(SHORT,F)
RFQ
VIEW
RFQ
2,992
In-stock
Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms 2µs, 200µs 30V 1.15V 80mA 20% @ 10mA - - 500mV
6N136F
RFQ
VIEW
RFQ
3,591
In-stock
Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 8DIP - Active Tube DC -55°C ~ 100°C Through Hole 8-DIP (0.300", 7.62mm) Transistor with Base 1 8-DIP 8mA 2500Vrms - 15V 1.65V 25mA 19% @ 16mA - 200ns, 500ns -
TLP631(GR,F)
RFQ
VIEW
RFQ
863
In-stock
Toshiba Semiconductor and Storage OPTOISO 5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 50mA 5000Vrms 2µs, 3µs 55V 1.15V 60mA 100% @ 5mA 300% @ 5mA 3µs, 3µs 400mV
TLP631(BL,F)
RFQ
VIEW
RFQ
2,572
In-stock
Toshiba Semiconductor and Storage OPTOISO 5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 50mA 5000Vrms 2µs, 3µs 55V 1.15V 60mA 200% @ 5mA 600% @ 5mA 3µs, 3µs 400mV
4N38(SHORT,F)
RFQ
VIEW
RFQ
1,390
In-stock
Toshiba Semiconductor and Storage OPTOISO 2.5KV TRANS W/BASE 6DIP - Active Tube DC -55°C ~ 100°C Through Hole 6-DIP (0.300", 7.62mm) Transistor with Base 1 6-DIP 100mA 2500Vrms - 80V 1.15V 80mA 10% @ 10mA - 3µs, 3µs 1V